Preliminary Technical Information TM V = 650V XPT 650V IGBTs IXXK160N65B4 CES TM I = 160A GenX4 IXXX160N65B4 C110 V 1.80V CE(sat) t = 90ns Extreme Light Punch Through fi(typ) IGBT for 10-30kHz Switching TO-264 (IXXK) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 650 V CES J C V T = 25C to 175C, R = 1M 650 V E CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM PLUS247 (IXXX) I T = 25C (Chip Capability) 310 A C25 C I Leads Current Limit 160 A LRMS I T = 110C 160 A C110 C I T = 25C, 1ms 860 A CM C G SSOA V = 15V, T = 150C, R = 1 I = 320 A G GE VJ G CM C Tab E (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J G = Gate E = Emitter (SCSOA) R = 10, Non Repetitive G C = Collector Tab = Collector P T = 25C 940 W C C T -55 ... +175 C J T 175 C Features JM T -55 ... +175 C stg z Optimized for 10-30kHz Switching T Maximum Lead Temperature for Soldering 300 C L z Square RBSOA T 1.6 mm (0.062in.) from Case for 10s 260 C z SOLD Short Circuit Capability z International Standard Packages M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Power Inverters BV I = 250A, V = 0V 650 V z CES C GE UPS z Motor Drives V I = 250A, V = V 4.0 6.5 V GE(th) C CE GE z SMPS I V = V , V = 0V 25 A z CES CE CES GE PFC Circuits z T = 150C 1.5 mA Battery Chargers J z Welding Machines I V = 0V, V = 20V 200 nA GES CE GE z Lamp Ballasts V I = 160A, V = 15V, Note 1 1.54 1.80 V CE(sat) C GE T = 150C 1.85 V J 2012 IXYS CORPORATION, All Rights Reserved DS100517A(02/13)IXXK160N65B4 IXXX160N65B4 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 70 S fs C CE C 8220 pF ies C V = 25V, V = 0V, f = 1MHz 500 pF oes CE GE C 295 pF res Q 425 nC g(on) Q I = 160A, V = 15V, V = 0.5 V 82 nC ge C GE CE CES Q 193 nC gc t 52 ns d(on) Inductive load, T = 25C t 64 ns J ri I = 80A, V = 15V E 3.30 mJ C GE on Terminals: 1 = Gate V = 400V, R = 1 t 220 ns CE G 2,4 = Collector d(off) 3 = Emitter t 90 ns Note 2 fi E 1.88 3.00 mJ f of t 43 ns d(on) Inductive load, T = 150C t 50 ns J ri I = 80A, V = 15V E 4.30 mJ C GE on V = 400V, R = 1 t 220 ns CE G d(off) t 160 ns Note 2 fi E 2.36 mJ off R 0.16 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches PRELIMINARY TECHNICAL INFORMATION Min. Max. Min. Max. A 4.83 5.21 .190 .205 The product presented herein is under development. The Technical Specifications offered are derived A 2.29 2.54 .090 .100 1 from data gathered during objective characterizations of preliminary engineering lots but also may yet A 1.91 2.16 .075 .085 2 contain some information supplied during a pre-production design evaluation. IXYS reserves the right b 1.14 1.40 .045 .055 to change limits, test conditions, and dimensions without notice. b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537