Advance Technical Information TM 1200V XPT V = 1200V IXYA20N120C4HV CES TM GenX4 IGBT I = 20A IXYP20N120C4 C110 V 2.5V CE(sat) t = 58ns High-Speed IGBT fi(typ) for 20-50 kHz Switching TO-263HV (IXYA..HV) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 1200 V CES J E V T = 25C to 175C, R = 1M 1200 V CGR J GE C (Tab) V Continuous 20 V GES TO-220 V Transient 30 V GEM (IXYP) I T = 25C 68 A C25 C I T = 110C 20 A C110 C I T = 25C, 1ms 120 A CM C G C SSOA V = 15V, T = 150C, R = 10 I = 40 A GE VJ G CM E C (Tab) (RBSOA) Clamped Inductive Load V 0.8 V CE CES P T = 25C 375 W C C G = Gate D = Collector E = Emitter Tab = Collector T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque (TO-220) 1.13/10 Nm/lb.in d F Mounting Force (TO-263HV) 10..65 / 22..14.6 N/lb C Optimized for Low Switching Losses Weight TO-263HV 2.5 g Positive Thermal Coefficient of TO-220 3.0 g Vce(sat) International Standard Package Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 1200 V CES C GE Power Inverters V I = 250 A, V = V 4.0 6.5 V GE(th) C CE GE UPS Motor Drives I V = V , V = 0V 25 A CES CE CES GE SMPS T = 150C 5 mA J Battery Chargers I V = 0V, V = 20V 100 nA Welding Machines GES CE GE Lamp Ballasts V I = 20A, V = 15V, Note 1 2.1 2.5 V CE(sat) C GE T = 150C 2.5 V J 2018 IXYS CORPORATION, All Rights Reserved DS100927A(8/18)IXYA20N120C4HV IXYP20N120C4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7.5 12.5 S fs C CE C 890 pF ies C V = 25V, V = 0V, f = 1MHz 95 pF oes CE GE C 33 pF res Q 44 nC g(on) Q I = 20A, V = 15V, V = 0.5 V 8 nC ge C GE CE CES Q 20 nC gc t 14 ns d(on) t 53 ns Inductive load, T = 25C ri J E 4.4 mJ I = 20A, V = 15V on C GE t 160 ns V = 0.8 V , R = 10 d(off) CE CES G t 58 ns fi Note 2 E 1.0 mJ f of t 13 ns d(on) Inductive load, T = 125C t 37 ns J ri I = 20A, V = 15V E 4.9 mJ C GE on V = 0.8 V , R = 10 t 200 ns CE CES G d(off) t 86 ns Note 2 fi E 1.6 mJ off R 0.40 C/W thJC R TO-220 0.50 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537