Advance Technical Information TM 1200V XPT V = 1200V IXYA30N120A4HV CES TM GenX4 IGBT I = 30A IXYP30N120A4 C110 V 1.9V IXYH30N120A4 CE(sat) t = 147ns fi(typ) Ultra Low-Vsat PT IGBT for up to 5kHz Switching TO-263HV (IXYA..HV) G E C (Tab) TO-220 Symbol Test Conditions Maximum Ratings (IXYP) V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V G GES C V Transient 30 V E GEM C (Tab) I T = 25C 106 A C25 C I T = 110C 30 A C110 C TO-247 I T = 25C, 1ms 184 A (IXYH) CM C SSOA V = 15V, T = 150C, R = 5 I = 60 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES G P T = 25C 500 W C C C C (Tab) E T -55 ... +175 C J G = Gate C = Collector T 175 C JM E = Emitter Tab = Collector T -55 ... +175 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Optimized for Low Conduction F Mounting Force (TO-263HV) 10..65 / 2.2..14.6 N/lb Positive Thermal Coefficient of C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in Vce(sat) d International Standard Packages Weight TO-263HV 2.5 g TO-220 3.0 g TO-247 6.0 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 1200 V CES C GE V I = 250 A, V = V 4.0 6.5 V Power Inverters GE(th) C CE GE UPS I V = V , V = 0V 10 A CES CE CES GE Motor Drives T = 150C 500 A J SMPS I V = 0V, V = 20V 100 nA PFC Circuits GES CE GE Battery Chargers V I = 25A, V = 15V, Note 1 1.6 1.9 V CE(sat) C GE Welding Machines T = 150C 1.9 V J Lamp Ballasts Inrush Current Protection Circuits 2018 IXYS CORPORATION, All Rights Reserved DS100928A(8/18)IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 25A, V = 10V, Note 1 10 16 S fs C CE C 1150 pF ies C V = 25V, V = 0V, f = 1MHz 70 pF oes CE GE C 40 pF res Q 57 nC g(on) Q I = 25A, V = 15V, V = 0.5 V 8 nC ge C GE CE CES Q 26 nC gc t 15 ns d(on) t 42 ns Inductive load, T = 25C ri J E 4.0 mJ I = 25A, V = 15V on C GE t 235 ns V = 0.8 V , R = 5 d(off) CE CES G t 147 ns fi Note 2 E 3.4 mJ f of t 13 ns d(on) Inductive load, T = 125C t 33 ns J ri I = 25A, V = 15V E 4.8 mJ C GE on V = 0.8 V , R = 5 t 316 ns CE CES G d(off) t 270 ns Note 2 fi E 5.6 mJ off R 0.30 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537