TM 900V XPT IGBT V = 900V IXYA8N90C3D1 CES TM GenX3 w/ Diode I = 8A IXYP8N90C3D1 C110 V 3.0V CE(sat) t = 130ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E V T = 25C to 175C 900 V CES J C (Tab) V T = 25C to 175C, R = 1M 900 V CGR J GE V Continuous 20 V TO-220AB (IXYP) GES V Transient 30 V GEM I T = 25C 20 A C25 C I T = 110C 8 A C110 C I T = 110C 12 A F110 C G I T = 25C, 1ms 48 A C C (Tab) CM C E I T = 25C 4 A A C E T = 25C 15 mJ AS C G = Gate C = Collector SSOA V = 15V, T = 150C, R = 30 I = 16 A E = Emitter Tab = Collector GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 125 W C C Features T -55 ... +175 C J T 175 C JM Optimized for Low Switching Losses T -55 ... +175 C stg Square RBSOA T Maximum Lead Temperature for Soldering 300 C Positive Thermal Coefficient of L Vce(sat) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Anti-Parallel Ultra Fast Diode M Mounting Torque (TO-220) 1.13/10 Nm/lb.in. d Avalanche Rated F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb. C International Standard Packages Weight TO-263 2.5 g TO-220 3.0 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 950 V CES C GE V I = 250 A, V = V 3.5 6.0 V High Frequency Power Inverters GE(th) C CE GE UPS I V = V , V = 0V 60 A CES CE CES GE Motor Drives T = 125C 400 A J SMPS PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE Battery Chargers V I = 8A, V = 15V, Note 1 2.15 3.00 V CE(sat) C GE Welding Machines T = 125C 2.60 V Lamp Ballasts J 2014 IXYS CORPORATION, All Rights Reserved DS100400C(12/14)IXYA8N90C3D1 IXYP8N90C3D1 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 8A, V = 10V, Note 1 2.9 4.8 S fs C CE C 400 pF ies C V = 25V, V = 0V, f = 1MHz 30 pF oes CE GE C 7.8 pF res Q 13.3 nC g(on) 1. Gate Q I = 8A, V = 15V, V = 0.5 V 3.4 nC ge C GE CE CES 2. Collector Q 5.8 nC 3. Emitter gc 4. Collector Bottom Side t 16 ns d(on) t 20 ns Inductive load, T = 25C ri J E 0.46 mJ I = 8A, V = 15V on C GE Dim. Millimeter Inches Min. Max. Min. Max. t 40 ns V = 0.5 V , R = 30 d(off) CE CES G A 4.06 4.83 .160 .190 t 130 ns b 0.51 0.99 .020 .039 fi Note 2 b2 1.14 1.40 .045 .055 E 0.18 0.50 mJ f of c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 t 17 ns d(on) D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 Inductive load, T = 125C t 22 ns J ri E 9.65 10.41 .380 .405 I = 8A, V = 15V E 1.00 mJ C GE on E1 6.22 8.13 .270 .320 V = 0.5 V , R = 30 e 2.54 BSC .100 BSC t 75 ns CE CES G d(off) L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 t 163 ns Note 2 fi L2 1.02 1.40 .040 .055 E 0.22 mJ L3 1.27 1.78 .050 .070 off L4 0 0.13 0 .005 R 1.2 C/W thJC R TO-220 0.50 C/W thCS TO-220 Outline Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.0 V F I = 10A,V = 0V, Note 1 F GE T = 150C 2.0 V J I 7.5 A RM I = 10A,V = 0V, -di /dt = 200A/ s, T = 100C F GE F J V = 600V T = 100C t 114 ns R J rr R 2.5 C/W thJC Pins: 1 - Gate 2 - Collector 3 - Emitter Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537