TM 1200V XPT IGBT V = 1200V IXYB82N120C3H1 CES TM GenX3 w/ Diode I = 82A C110 V 3.2V CE(sat) t = 93ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TM PLUS264 Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1200 V CES J C E V T = 25C to 150C, R = 1M 1200 V CGR J GE Tab V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector E = Emitter Tab = Collector I T = 25C (Chip Capability) 164 A C25 C I Lead Current Limit 160 A LRMS I T = 110C 82 A C110 C I T = 110C 42 A F110 C I T = 25C, 1ms 320 A CM C Features SSOA V = 15V, T = 125C, R = 2 I = 164 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for Low Switching Losses P T = 25C 1040 W Square RBSOA C C Anti-Parallel Ultra Fast Diode T -55 ... +150 C J Positive Thermal Coefficient of T 150 C JM Vce(sat) T -55 ... +150 C High Current Handling Capability stg International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages F Mounting Force 30..120 / 6.7..27 N/lb. C Weight 10 g High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 1200 V PFC Circuits CES C GE Battery Chargers V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Welding Machines I V = V , V = 0V 50 A Lamp Ballasts CES CE CES GE T = 125C 3 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 82A, V = 15V, Note 1 2.75 3.20 V CE(sat) C GE T = 125C 3.50 V J 2018 IXYS CORPORATION, All Rights Reserved DS100355F(7/18)IXYB82N120C3H1 Symbol Test Conditions Characteristic Values TM PLUS264 (IXYB) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4060 pF ies C V = 25V, V = 0V, f = 1MHz 285 pF oes CE GE C 110 pF res Q 215 nC g(on) Pin 1 = Gate Q I = 82A, V = 15V, V = 0.5 V 26 nC Pin 2,4 = Collector ge C GE CE CES Pin 3 = Emitter Q 84 nC gc t 29 ns d(on) t 78 ns Inductive load, T = 25C ri J E 4.95 mJ I = 80A, V = 15V on C GE t 192 280 ns V = 0.5 V , R = 2 d(off) CE CES G t 93 ns fi Note 2 E 2.78 5.00 mJ f of t 29 ns d(on) Inductive load, T = 125C t 90 ns J ri I = 80A, V = 15V E 7.45 mJ C GE on V = 0.5 V , R = 2 t 200 ns CE CES G d(off) t 95 ns Note 2 fi E 3.70 mJ off R 0.12 C/W thJC R 0.13 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 2.7 V F F GE T = 125C 1.9 V J I 41 A RM I = 60A, V = 0V, T = 125C F GE J -di /dt = 700A/s, V = 600V t 420 ns F R rr R 0.35 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537