Advance Technical Information TM 650V XPT IGBT V = 650V IXYH100N65A3 CES TM GenX3 I = 100A C110 V 1.80V CE(sat) t = 86ns fi(typ) Low-Vsat IGBT for up to 5kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 240 A C25 C G = Gate C = Collector I T = 110C 100 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 480 A CM C I T = 25C 50 A A C E T = 25C 830 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 8 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Optimized for up to 5kHz Switching P T = 25C 470 W Square RBSOA C C Avalanche Rated T -55 ... +175 C J Short Circuit Capability T 175 C JM High Current Handling Capability T -55 ... +175 C stg TT Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 6g Low Gate Drive Requirement Applications UPS Motor Drives SMPS Symbol Test Conditions Characteristic Values PFC Circuits (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Battery Chargers J Low Frequency Power Inverters BV I = 250 A, V = 0V 650 V CES C GE AC Switches V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE I V = V , V = 0V 25 A CES CE CES GE T = 125C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 70A, V = 15V, Note 1 1.50 1.80 V CE(sat) C GE T = 150C 1.65 V J 2017 IXYS CORPORATION, All Rights Reserved DS100803(02/17)IXYH100N65A3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 32 58 S C CE fs Q S D2 R C 4780 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 290 pF 0P1 oes CE GE 4 R1R1R1R1 C 103 pF 1 2 3 IXYS OPTION res L1 C Q 178 nC g E1 L Q I = 70A, V = 15V, V = 0.5 V 31 nC ge C GE CE CES Q 78 nC gc A1 b c b2 t 24 ns b4 1 - Gate d(on) e 2,4 - Collector Inductive load, T = 25C t 64 ns J J M C A M ri 3 - Emitter I = 50A, V = 15V E 3.15 mJ C GE on V = 400V, R = 2 t 174 ns CE G d(off) t 86 ns Note 2 fi E 2.20 mJ f of t 23 ns d(on) Inductive load, T = 150C t 64 ns J ri I = 50A, V = 15V E 4.00 mJ C GE on V = 400V, R = 2 t CE G 234 ns d(off) t Note 2 225 ns fi E 3.70 mJ off R 0.18 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537