Advance Technical Information High Voltage V = 2500V IXYT12N250CV1HV CES TM XPT IGBT I = 12A IXYH12N250CV1HV C110 w/ Diode V 4.50V CE(sat) t = 136ns fi(typ) TO-268HV (IXYT) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 175C 2500 V CES J TO-247HV (IXYH) V T = 25C to 175C, R = 1M 2500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 28 A C25 C I T = 110C 12 A C110 C G I T = 110C 14 A F110 C E I T = 25C, 1ms 80 A CM C C (Tab) C SSOA V = 15V, T = 150C, R = 10 I = 48 A GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V G = Gate C = Collector P T = 25C 310 W C C E = Emitter Tab = Collector T -55 ... +175 C J T 175 C JM T -55 ... +175 C Features stg T Maximum Lead Temperature for Soldering 300 C L High Voltage Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Blocking Voltage M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in. d High Peak Current Capability Weight TO-268HV 4 g Low Saturation Voltage TO-247HV 6 g Advantages Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J BV I = 250 A, V = 0V 2500 V CES C GE Applications V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = V , V = 0V 25 A CES CE CES GE Switch-Mode and Resonant-Mode V = 0.8 V , V = 0V T = 150C 3.5 mA Power Supplies CE CES GE J Uninterruptible Power Supplies (UPS) I V = 0V, V = 20V 100 nA GES CE GE Laser Generators V I = 12A, V = 15V, Note 1 3.70 4.50 V CE(sat) C GE Capacitor Discharge Circuits T = 150C 5.55 V J AC Switches 2017 IXYS CORPORATION, All Rights Reserved. DS100792A(5/17)IXYT12N250CV1HV IXYH12N250CV1HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. E A E1 J L2 C2 g I = 12A, V = 10V, Note 1 7 12 S fs C CE 3 D1 3 D H D2 R Gate Input Resistance 7.5 Gi 1 2 D3 2 1 A1 L4 C 1370 pF ies C e e b C V = 25V, V = 0V, f = 1MHz 65 pF oes CE GE C 16 pF res PINS: 1 - Gate 2 - Emitter Q 56 nC g(on) 3 - Collector Q I = 12A, V = 15V, V = 0.5 V 6 nC ge C GE CE CES L3 A2 Q 28 nC gc L t 12 ns d(on) Inductive load, T = 25C J t 16 ns ri = 12A, V = 15V I C GE E 3.56 mJ on V = 0.5 V , R = 10 t CE CES G 167 ns d(off) Note 2 t 136 ns fi E 1.70 mJ off t 12 ns d(on) Inductive load, T = 150C J t 20 ns ri I = 12A, V = 15V E C GE 4.78 mJ on V = 0.5 V , R = 10 CE CES G t 195 ns d(off) Note 2 t 138 ns fi E 1.95 mJ off R 0.48 C/W thJC TO-247HV Outline R TO-247HV 0.21 C/W thCS E1 E A R 0P A2 0P1 Q S D1 D Reverse Diode (FRED) 4 D2 1 2 3 (T = 25C, Unless Otherwise Specified) Characteristic Value J L1 A3 D3 E2 2X Symbol Test Conditions Min. Typ. Max. E3 A1 L 4X V 4.5 V F I = 12A,V = 0V, Note 1 F GE T = 150C 4.2 V J e b b1 c e1 3X 3X PINS: I 22 A RM I = 12A,V = 0V, -di /dt = 500A/ s, F GE F 1 - Gate 2 - Emitter 3, 4 - Collector V = 1200V, T = 150C t 165 ns R J rr R 0.80 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537