Advance Technical Information High Voltage V = 2500V IXYH16N250CV1HV CES TM XPT IGBT I = 16A C110 w/ Diode V 4.0V CE(sat) t = 250ns fi(typ) TO-247HV (IXYH) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 2500 V CES J V T = 25C to 175C, R = 1M 2500 V CGR J GE V Continuous 20 V GES V Transient 30 V G GEM E I T = 25C 38 A C (Tab) C25 C C I T = 110C 16 A C110 C I T = 110C 14 A F110 C I T = 25C, 1ms 126 A G = Gate C = Collector CM C E = Emitter Tab = Collector SSOA V = 15V, T = 150C, R = 10 I = 64 A GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V P T = 25C 500 W C C T -55 ... +175 C Features J T 175 C JM T -55 ... +175 C High Voltage Package stg High Blocking Voltage T Maximum Lead Temperature for Soldering 300 C L High Peak Current Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Saturation Voltage M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 2500 V CES C GE Switch-Mode and Resonant-Mode V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Power Supplies I V = V , V = 0V 50 A Uninterruptible Power Supplies (UPS) CES CE CES GE V = 0.8 V , V = 0V T = 150C 4 mA Laser Generators CE CES GE J Capacitor Discharge Circuits I V = 0V, V = 20V 100 nA GES CE GE AC Switches V I = 16A, V = 15V, Note 1 3.30 4.00 V CE(sat) C GE T = 150C 4.75 V J 2017 IXYS CORPORATION, All Rights Reserved. DS100794A(5/17)IXYH16N250CV1HV Symbol Test Conditions Characteristic Values TO-247HV Outline E1 E A (T = 25C Unless Otherwise Specified) Min. Typ. Max. R J 0P A2 0P1 Q S g I = 16A, V = 10V, Note 1 11 18 S fs C CE D1 D 4 R Gate Input Resistance 5.8 Gi D2 C 1980 pF ies 1 2 3 L1 A3 D3 E2 2X C V = 25V, V = 0V, f = 1MHz 94 pF oes CE GE E3 A1 4X L C 28 pF res Q 97 nC g(on) e b b1 c e1 3X 3X Q I = 16A, V = 15V, V = 0.5 V 13 nC PINS: ge C GE CE CES 1 - Gate 2 - Emitter Q 43 nC 3, 4 - Collector gc t 14 ns d(on) Inductive load, T = 25C J t 19 ns ri = 16A, V = 15V I C GE E 4.75 mJ on V = 0.5 V , R = 10 t CE CES G 260 ns d(off) Note 2 t 250 ns fi E 3.90 mJ off t 15 ns d(on) Inductive load, T = 150C J t 24 ns ri I = 16A, V = 15V E C GE 5.80 mJ on V = 0.5 V , R = 10 CE CES G t 305 ns d(off) Note 2 t 236 ns fi E 4.40 mJ off R 0.30 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 5.0 V F I = 16A,V = 0V, Note 1 F GE T = 150C 4.8 V J I 28 A RM I = 16A, V = 0V, -di /dt = 500A/ s, F GE F V = 1200V, T = 150C t 165 ns R J rr R 0.80 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537