X-On Electronics has gained recognition as a prominent supplier of IXYH20N120C3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IXYH20N120C3 IGBT Transistors are a product manufactured by IXYS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IXYH20N120C3 IXYS

IXYH20N120C3 electronic component of IXYS
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Part No.IXYH20N120C3
Manufacturer: IXYS
Category: IGBT Transistors
Description: IGBT Transistors GenX3 1200V XPT IGBT
Datasheet: IXYH20N120C3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.7292 ea
Line Total: USD 9.73 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 300
Multiples : 300
300 : USD 11.808

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 300
Multiples : 300
300 : USD 4.367

0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 9.7292
3 : USD 6.6082
7 : USD 6.2554

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
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Subcategory
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXYH20N120C3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXYH20N120C3 and other electronic components in the IGBT Transistors category and beyond.

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The IXYH20N120C3 is a 1200V High Voltage Metal Oxide Field Effect Transistor (MOSFET) manufactured by IXYS. It is an N-channel device and features 4.7nC input capacitance and 1.5uH output inductance. The device has a maximum drain source voltage of 1200 volts, a continuous drain current of 20 Amps and a peak drain current rating of 120 Amps. It has a gate charge of 15 nC and a gate threshold voltage of 3.5 volts. This device is suitable for a wide range of high voltage switching and power conversion applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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