TM 1200V XPT IGBT V = 1200V IXYH20N120C3D1 CES TM GenX3 w/ Diode I = 17A C110 V 3.4V CE(sat) t = 108ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 36 A C25 C G = Gate C = Collector I T = 110C 17 A C110 C E = Emitter Tab = Collector I T = 110C 20 A F110 C I T = 25C, 1ms 88 A CM C I T = 25C 10 A A C E T = 25C 400 mJ AS C Features SSOA V = 15V, T = 150C, R = 10 I = 40 A GE VJ G CM Optimized for Low Switching Losses (RBSOA) Clamped Inductive Load V V CE CES Square RBSOA P T = 25C 230 W Positive Thermal Coefficient of C C Vce(sat) T -55 ... +150 C J Anti-Parallel Ultra Fast Diode T 150 C JM Avalanche Rated T -55 ... +150 C stg International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in. d High Power Density Weight 6g Low Gate Drive Requirement Applications High Frequency Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 1200 V PFC Circuits CES C GE Battery Chargers V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Welding Machines I V = V , V = 0V 25 A Lamp Ballasts CES CE CES GE T = 125C 350 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 20A, V = 15V, Note 1 3.4 V CE(sat) C GE T = 150C 4.0 V J 2013 IXYS CORPORATION, All Rights Reserved DS100485B(8/13)IXYH20N120C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7.0 11.5 S fs C CE C 1110 pF ies C V = 25V, V = 0V, f = 1MHz 120 pF P oes CE GE 1 2 3 C 27 pF res Q 53 nC g(on) Q I = 20A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Q 22 nC gc t 20 ns e d(on) t 29 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 1.3 mJ I = 20A, V = 15V on C GE Dim. Millimeter Inches t 90 ns V = 0.5 V , R = 10 d(off) CE CES G Min. Max. Min. Max. t 108 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 0.5 1.0 mJ 1 f of A 2.2 2.6 .059 .098 2 t 20 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 40 ns J ri b 2.87 3.12 .113 .123 2 I = 20A, V = 15V E 3.7 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 10 t 115 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 105 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 0.7 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.54 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t 195 ns V = 600V T = 100C rr R J R 0.90 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537