TM 1200V XPT IGBT V = 1200V IXYH30N120C3D1 CES TM GenX3 w/ Diode I = 30A C110 V 3.3V CE(sat) t = 88ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 66 A C25 C G = Gate C = Collector I T = 110C 30 A C110 C E = Emitter Tab = Collector I T = 110C 20 A F110 C I T = 25C, 1ms 133 A CM C I T = 25C 20 A A C E T = 25C 400 mJ AS C Features SSOA V = 15V, T = 150C, R = 10 I = 60 A GE VJ G CM Optimized for Low Switching Losses (RBSOA) Clamped Inductive Load V V CE CES Square RBSOA P T = 25C 416 W Positive Thermal Coefficient of C C Vce(sat) T -55 ... +150 C J Anti-Parallel Ultra Fast Diode T 150 C JM Avalanche Rated T -55 ... +150 C stg High Current Handling Capability International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in Advantages d Weight 6g High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Motor Drives J SMPS BV I = 250 A, V = 0V 1200 V CES C GE PFC Circuits V I = 250 A, V = V 3.0 5.0 V Battery Chargers GE(th) C CE GE Welding Machines I V = V , V = 0V 25 A CES CE CES GE Lamp Ballasts T = 125C 350 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 30A, V = 15V, Note 1 3.3 V CE(sat) C GE T = 150C 3.7 V J 2013 IXYS CORPORATION, All Rights Reserved DS100386D(9/13)IXYH30N120C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 10 17 S fs C CE C 1640 pF ies C V = 25V, V = 0V, f = 1MHz 140 pF P oes CE GE 1 2 3 C 38 pF res Q 69 nC g(on) Q I = 30A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Q 34 nC gc t 19 ns e d(on) t 40 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 2.6 mJ I = 30A, V = 15V on C GE Dim. Millimeter Inches t 130 ns V = 0.5 V , R = 10 d(off) CE CES G Min. Max. Min. Max. t 88 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.1 mJ 1 f of A 2.2 2.6 .059 .098 2 t 19 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 52 ns J ri b 2.87 3.12 .113 .123 2 I = 30A, V = 15V E 6.0 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 10 t 156 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 140 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.6 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.30 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t 195 ns V = 600V T = 100C rr R J R 0.90 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537