TM 1200V XPT IGBT V = 1200V IXYH40N120B3 CES TM GenX3 I = 40A C110 V 2.9V CE(sat) t = 183ns Extreme Light Punch Through fi(typ) IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings G C Tab E V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE G = Gate C = Collector V Continuous 20 V GES E = Emitter Tab = Collector V Transient 30 V GEM I T = 25C (Chip Capability) 96 A C25 C I T = 110C 40 A C110 C I T = 25C, 1ms 200 A CM C I T = 25C 20 A A C Features E T = 25C 400 mJ AS C z Optimized for 5-30kHZ Switching SSOA V = 15V, T = 150C, R = 10 I = 80 A GE VJ G CM z Square RBSOA (RBSOA) Clamped Inductive Load V V z CE CES Positive Thermal Coefficient of Vce(sat) P T = 25C 577 W C C z Avalanche Rated T -55 ... +175 C z J International Standard Package T 175 C JM T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z High Power Density M Mounting Torque 1.13/10 Nm/lb.in. d z Low Gate Drive Requirement Weight 6g Applications Symbol Test Conditions Characteristic Values z Power Inverters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J UPS z Motor Drives BV I = 250A, V = 0V 1200 V CES C GE z SMPS V I = 250A, V = V 3.0 5.0 V z GE(th) C CE GE PFC Circuits z Battery Chargers I V = V , V = 0V 25 A CES CE CES GE z Welding Machines T = 150C 500 A z J Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 2.4 2.9 V CE(sat) C GE T = 150C 3.1 V J 2013 IXYS CORPORATION, All Rights Reserved DS100412B(03/13)IXYH40N120B3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 13 22 S fs C CE C 1690 pF ies C V = 25V, V = 0V, f = 1MHz 117 pF P oes CE GE 1 2 3 C 47 pF res Q 87 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 12 nC ge C GE CE CES Q 38 nC gc t 22 ns e d(on) t 50 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 2.70 mJ I = 40A, V = 15V on C GE Dim. Millimeter Inches t 177 ns V = 0.5 V , R = 10 d(off) CE CES G Min. Max. Min. Max. t 183 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.60 3.00 mJ 1 f of A 2.2 2.6 .059 .098 2 t 24 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t 60 ns J ri b 2.87 3.12 .113 .123 2 I = 40A, V = 15V E 5.25 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 10 t 205 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 206 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 2.05 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.26 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537