TM 1200V XPT IGBT V = 1200V IXYH40N120C3D1 CES TM GenX3 w/ Diode I = 40A C90 V 3.5V CE(sat) t = 50ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 80 A C25 C G = Gate C = Collector I T = 90C 40 A C90 C E = Emitter Tab = Collector I T = 110C 25 A F110 C I T = 25C, 1ms 160 A CM C I T = 25C 20 A A C E T = 25C 400 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 80 A Features GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for Low Switching Losses P T = 25C 480 W C C Square RBSOA T -55 ... +150 C Positive Thermal Coefficient of J Vce(sat) T 150 C JM Anti-Parallel Ultra Fast Diode T -55 ... +150 C stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C High Current Handling Capability L T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Package SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Advantages Weight 6g High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values High Frequency Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J UPS Motor Drives BV I = 250 A, V = 0V 1200 V CES C GE SMPS V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE PFC Circuits Battery Chargers I V = V , V = 0V 25 A CES CE CES GE Welding Machines T = 125C 750 A J Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 2.9 3.5 V CE(sat) C GE T = 150C 3.7 V J 2016 IXYS CORPORATION, All Rights Reserved DS100417C(5/16)IXYH40N120C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 40A, V = 10V, Note 1 11 18 S fs C CE Q S D2 R C 1870 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 107 pF 0P1 oes CE GE 4 R1R1R1R1 C 38 pF 1 2 3 res IXYS OPTION L1 C Q 80 nC g(on) E1 L Q I = 40A, V = 15V, V = 0.5 V 14 nC ge C GE CE CES Q 37 nC gc A1 b c b2 t 18 ns b4 d(on) 1 - Gate e 2,4 - Collector t 64 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 3.8 mJ I = 40A, V = 15V on C GE t 133 ns V = 0.5 V , R = 10 d(off) CE CES G t 50 ns fi Note 2 E 1.1 mJ f of t 22 ns d(on) Inductive load, T = 150C t 73 ns J ri I = 40A, V = 15V E 6.6 mJ C GE on V = 0.5 V , R = 10 t 160 ns CE CES G d(off) t 143 ns Note 2 fi E 2.1 mJ off R 0.26 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t 195 ns V = 600V T = 100C rr R J R 0.90 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537