Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYH40N65C3 CES TM GenX3 I = 40A C110 V 2.35V CE(sat) t = 20ns fi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 80 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 180 A CM C I T = 25C 20 A A C E T = 25C 300 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 80 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES Optimized for 20-60kHz Switching t V = 15V, V = 360V, T = 150C 5 s sc GE CE J Square RBSOA (SCSOA) R = 82, Non Repetitive G Avalanche Rated P T = 25C 300 W Short Circuit Capability C C International Standard Package T -55 ... +175 C J T 175 C JM T -55 ... +175 C Advantages stg T Maximum Lead Temperature for Soldering 300 C L High Power Density T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Extremely Rugged Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in d Weight 6g Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 650 V CES C GE Battery Chargers V I = 250 A, V = V 3.5 6.0 V Welding Machines GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 10 A CES CE CES GE High Frequency Power Inverters T = 150C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 2.0 2.35 V CE(sat) C GE T = 150C 2.4 V J 2014 IXYS CORPORATION, All Rights Reserved DS100570C(8/14)IXYH40N65C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 16 26 S fs C CE C 1950 pF ies C V = 25V, V = 0V, f = 1MHz 118 pF P oes CE GE 1 2 3 C 40 pF res Q 66 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 13 nC ge C GE CE CES Q 32 nC gc t 23 ns e d(on) t 40 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitted E 0.83 mJ I = 30A, V = 15V on C GE Dim. Millimeter Inches t 110 ns V = 400V, R = 10 d(off) CE G Min. Max. Min. Max. t 20 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 0.36 0.65 mJ 1 f of A 2.2 2.6 .059 .098 2 t 24 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 40 ns J ri b 2.87 3.12 .113 .123 2 I = 30A, V = 15V E 1.60 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 400V, R = 10 t 130 ns CE G d(off) E 15.75 16.26 .610 .640 t 30 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 0.53 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.50 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537