TM XPT 650V IGBT V = 650V IXYH40N65C3H1 CES TM GenX3 w/ Sonic Diode I = 40A C110 V 2.35V CE(sat) t = 52ns fi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 80 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 110C 40 A F110 C I T = 25C, 1ms 180 A CM C I T = 25C 20 A A C E T = 25C 300 mJ AS C Features SSOA V = 15V, T = 150C, R = 10 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for 20-60kHz Switching Square RBSOA t V = 15V, V = 360V, T = 150C 5 s sc GE CE J Anti-Parallel Sonic Diode (SCSOA) R = 82, Non Repetitive G Avalanche Rated P T = 25C 300 W Short Circuit Capability C C International Standard Package T -55 ... +175 C J T 175 C JM T -55 ... +175 C Advantages stg T Maximum Lead Temperature for Soldering 300 C L High Power Density T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Extremely Rugged Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in d Weight 6g Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 650 V CES C GE PFC Circuits Battery Chargers V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE Welding Machines I V = V , V = 0V 50 A CES CE CES GE Lamp Ballasts T = 150C 3 mA J High Frequency Power Inverters I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 2.00 2.35 V CE(sat) C GE T = 150C 2.40 V J 2014 IXYS CORPORATION, All Rights Reserved DS100510E(12/14)IXYH40N65C3H1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 16 27 S fs C CE C 1980 pF ies C V = 25V, V = 0V, f = 1MHz 215 pF P oes CE GE 1 2 3 C 40 pF res Q 70 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 14 nC ge C GE CE CES Q 34 nC gc t 26 ns e d(on) t 40 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitted E 0.86 mJ I = 30A, V = 15V on C GE Dim. Millimeter Inches t 106 ns V = 400V, R = 10 d(off) CE G Min. Max. Min. Max. t 52 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 0.40 0.75 mJ 1 f of A 2.2 2.6 .059 .098 2 t 25 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 40 ns J ri b 2.87 3.12 .113 .123 2 I = 30A, V = 15V E 1.33 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 400V, R = 10 t 126 ns CE G d(off) E 15.75 16.26 .610 .640 t 80 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 0.46 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.50 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.5 V F F GE T = 150C 2.15 V J I T = 150C 32 A RM I = 30A, V = 0V, J F GE t T = 150C 78 ns rr J -di /dt = 900A/s, V = 300V F R R 0.60 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537