Preliminary Technical Information TM 900V XPT IGBT V = 900V IXYH40N90C3 CES TM GenX3 I = 40A C110 V 2.5V CE(sat) t = 110ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 900 V CES J V T = 25C to 175C, R = 1M 900 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 105 A C25 C G = Gate C = Collector I T = 110C 40 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 200 A CM C SSOA V = 15V, T = 150C, R = 5 I = 80 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 600 W C C Features T -55 ... +175 C J T 175 C JM z Optimized for Low Switching Losses T -55 ... +175 C z stg Square RBSOA z Positive Thermal Coefficient of T Maximum Lead Temperature for Soldering 300 C L Vce(sat) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z International Standard Package M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Advantages z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values z High Frequency Power Inverters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J UPS z Motor Drives BV I = 250A, V = 0V 950 V CES C GE z SMPS V I = 250A, V = V 3.5 5.5 V z PFC Circuits GE(th) C CE GE z Battery Chargers I V = V , V = 0V 25 A CES CE CES GE z Welding Machines T = 150C 500 A J z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 40A, V = 15V, Note 1 2.2 2.5 V CE(sat) C GE T = 150C 2.9 V J 2013 IXYS CORPORATION, All Rights Reserved DS100444A(02/13)IXYH40N90C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 14 24 S fs C CE C 2170 pF ies C V = 25V, V = 0V, f = 1MHz 160 pF P oes CE GE 1 2 3 C 40 pF res Q 74 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 18 nC ge C GE CE CES Q 34 nC gc t 27 ns e d(on) t 54 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 1.9 mJ I = 40A, V = 15V on C GE Dim. Millimeter Inches t 78 ns V = 0.5 V , R = 5 d(off) CE CES G Min. Max. Min. Max. t 110 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.0 1.7 mJ 1 f of A 2.2 2.6 .059 .098 2 t 27 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t 54 ns J ri b 2.87 3.12 .113 .123 2 I = 40A, V = 15V E 2.7 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 5 t 87 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 150 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.2 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.25 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537