TM 1200V XPT IGBT V = 1200V IXYH50N120C3 CES TM GenX3 I = 50A C110 V 3.5V CE(sat) t = 43ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 100 A C25 C G = Gate C = Collector I T = 110C 50 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 240 A CM C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 750 W C C T -55 ... +175 C z J Optimized for Low Switching Losses z T 175 C Square RBSOA JM z T -55 ... +175 C Positive Thermal Coefficient of stg Vce(sat) T Maximum Lead Temperature for Soldering 300 C z L High Current Handling Capability z T 1.6 mm (0.062in.) from Case for 10s 260 C International Standard Package SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Advantages z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values z High Frequency Power Inverters (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z UPS z BV I = 250A, V = 0V 1200 V Motor Drives CES C GE z SMPS V I = 250A, V = V 3.0 5.0 V z GE(th) C CE GE PFC Circuits z Battery Chargers I V = V , V = 0V 25 A CES CE CES GE z Welding Machines T = 150C 250 A J z Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 50A, V = 15V, Note 1 3.1 3.5 V CE(sat) C GE T = 150C 4.2 V J 2013 IXYS CORPORATION, All Rights Reserved DS100343C(02/13)IXYH50N120C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 20 32 S fs C CE C 3100 pF ies C V = 25V, V = 0V, f = 1MHz 230 pF P oes CE GE 1 2 3 C 66 pF res Q 142 nC g(on) Q I = 50A, V = 15V, V = 0.5 V 23 nC ge C GE CE CES Q 60 nC gc t 28 ns e d(on) t 62 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 3.0 mJ I = 50A, V = 15V on C GE Dim. Millimeter Inches t 133 ns V = 0.5 V , R = 5 d(off) CE CES G Min. Max. Min. Max. t 43 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.0 1.7 mJ 1 f of A 2.2 2.6 .059 .098 2 t 28 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 68 ns J ri b 2.87 3.12 .113 .123 2 I = 50A, V = 15V E 6.0 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 5 t 160 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 60 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.4 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.20 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537