TM 1200V XPT IGBT V = 1200V IXYH50N120C3D1 CES TM GenX3 w/ Diode I = 50A C100 V 3.5V CE(sat) t = 43ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 90 A C25 C G = Gate C = Collector I T = 100C 50 A C100 C E = Emitter Tab = Collector I T = 110C 25 A F110 C I T = 25C, 1ms 210 A CM C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 625 W C C Features T -55 ... +150 C J Optimized for Low Switching Losses T 150 C JM Square RBSOA T -55 ... +150 C stg Positive Thermal Coefficient of T Maximum Lead Temperature for Soldering 300 C Vce(sat) L Anti-Parallel Ultra Fast Diode T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Current Handling Capability M Mounting Torque 1.13/10 Nm/lb.in. d International Standard Package Weight 6g Advantages High Power Density Low Gate Drive Requirement Applications High Frequency Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Motor Drives SMPS BV I = 250 A, V = 0V 1200 V CES C GE PFC Circuits V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Battery Chargers Welding Machines I V = V , V = 0V 50 A CES CE CES GE Lamp Ballasts T = 125C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 50A, V = 15V, Note 1 3.5 V CE(sat) C GE T = 150C 4.2 V J 2016 IXYS CORPORATION, All Rights Reserved DS100388D(04/16)IXYH50N120C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 20 32 S fs C CE C 3100 pF ies C V = 25V, V = 0V, f = 1MHz 230 pF P oes CE GE 1 2 3 C 66 pF res Q 142 nC g(on) Q I = 50A, V = 15V, V = 0.5 V 23 nC ge C GE CE CES Q 60 nC gc t 28 ns e d(on) t 62 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 3.0 mJ I = 50A, V = 15V on C GE Dim. Millimeter Inches t 133 ns V = 0.5 V , R = 5 d(off) CE CES G Min. Max. Min. Max. t 43 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.0 1.7 mJ 1 f of A 2.2 2.6 .059 .098 2 t 28 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 68 ns J ri b 2.87 3.12 .113 .123 2 I = 50A, V = 15V E 6.0 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 5 t 160 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 60 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 1.4 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.20 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t 195 ns V = 600V T = 100C rr R J R 0.90 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537