Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYH50N65C3H1 CES TM GenX3 w/ Sonic I = 50A C110 Diode V 2.10V CE(sat) t = 27ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C 130 A C25 C G = Gate C = Collector I T = 110C 50 A C110 C E = Emitter Tab = Collector I T = 110C 40 A F110 C I T = 25C, 1ms 250 A CM C I T = 25C 20 A A C E T = 25C 300 mJ AS C Features SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for 20-60kHz Switching t V = 15V, V = 360V, T = 150C 8 s Square RBSOA sc GE CE J Avalanche Rated (SCSOA) R = 82, Non Repetitive G Short Circuit Capability P T = 25C 600 W International Standard Package C C T -55 ... +175 C J T 175 C JM Advantages T -55 ... +175 C stg High Power Density T Maximum Lead Temperature for Soldering 300 C L Extremely Rugged T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in d Weight 6g Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 650 V CES C GE Battery Chargers V I = 250 A, V = V 3.5 6.0 V Welding Machines GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 50 A CES CE CES GE High Frequency Power Inverters T = 150C 3 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 36A, V = 15V, Note 1 1.74 2.10 V CE(sat) C GE T = 150C 2.00 V J 2014 IXYS CORPORATION, All Rights Reserved DS100572B(7/14)IXYH50N65C3H1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 19 28 S fs C CE C 2346 pF ies C V = 25V, V = 0V, f = 1MHz 230 pF oes CE GE C 50 pF res Q 80 nC g(on) Q I = 36A, V = 15V, V = 0.5 V 15 nC ge C GE CE CES Q 40 nC gc t 22 ns d(on) 1 - Gate 2,4 - Collector t 35 ns Inductive load, T = 25C ri J 3 - Emitter E 1.30 mJ I = 36A, V = 15V on C GE t 80 ns V = 400V, R = 5 d(off) CE G t 27 ns fi Note 2 E 0.37 mJ f of t 23 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 36A, V = 15V E 1.70 mJ C GE on V = 400V, R = 5 t 100 ns CE G d(off) t 42 ns Note 2 fi E 0.56 mJ off R 0.25 C/W thJC R 0.21 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.5 V F F GE T = 150C 2.15 V J I T = 150C 25 A I = 30A, V = 0V, RM J F GE t T = 150C 120 ns -di /dt = 500A/s, V = 300V rr J F R R 0.60 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537