TM 1200V XPT Gen 4 V = 1200V IXYH55N120C4 CES IGBT I = 55A C110 V 2.5V CE(sat) t = 42ns fi(typ) High Speed IGBT for 20-50kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 1200 V C CES J C (Tab) E V T = 25C to 175C, R = 1M 1200 V CGR J GE G = Gate C = Collector V Continuous 20 V GES E = Emitter Tab = Collector V Transient 30 V GEM I T = 25C 140 A C25 C I T = 110C 55 A C110 C I T = 25C, 1ms 290 A CM C SSOA V = 15V, T = 150C, R = 5 I = 110 A GE VJ G CM (RBSOA) Clamped Inductive Load V 0.8 V CE CES Features P T = 25C 650 W C C Optimized for Low Switching Losses T -55 ... +175 C J Positive Thermal Coefficient of T 175 C JM Vce(sat) T -55 ... +175 C stg International Standard Package T Maximum Lead Temperature for Soldering 300 C L 1.6 mm (0.062 in.) from Case for 10s Advantages M Mounting Torque 1.13 / 10 Nm/lb.in d High Power Density Weight 6 g Low Gate Drive Requirement Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. SMPS J PFC Circuits BV I = 250 A, V = 0V 1200 V CES C GE Battery Chargers V I = 250 A, V = V 4.0 6.5 V GE(th) C CE GE Welding Machines Lamp Ballasts I V = V , V = 0V 20 A CES CE CES GE T = 150 C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 55A, V = 15V, Note 1 2.1 2.5 V CE(sat) C GE T = 150 C 2.6 V J 2021 Littelfuse, Inc. DS100956C(10/21)IXYH55N120C4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 18 30 S fs C CE C 2300 pF ies C V = 25V, V = 0V, f = 1MHz 125 pF oes CE GE C 77 pF res Q 114 nC g(on) Q I = 55A, V = 15V, V = 0.5 V 19 nC ge C GE CE CES Q 49 nC gc t 20 ns d(on) t 50 ns Inductive load, T = 25C ri J E 3.50 mJ I = 40A, V = 15V on C GE t 180 ns V = 0.5 V , R = 5 d(off) CE CES G t 42 ns fi Note 2 E 1.34 mJ off t 20 ns d(on) Inductive load, T = 150C t 34 ns J ri I = 40A, V = 15V E 4.80 mJ C GE on V = 0.5 V , R = 5 t 200 ns CE CES G d(off) t 123 ns Note 2 fi E 2.50 mJ off R 0.23 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537