TM XPT 900V IGBT V = 900V IXYH60N90C3 CES TM GenX3 I = 60A C110 V 2.9V CE(sat) t = 88ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 900 V CES J V T = 25C to 175C, R = 1M 900 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 140 A C25 C G = Gate C = Collector I T = 110C 60 A C110 C E = Emitter Tab = Collector I T = 25C, 1ms 310 A CM C SSOA V = 15V, T = 150C, R = 3 I = 120 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 750 W C C Features T -55 ... +175 C J T 175 C JM Optimized for Low Switching Losses T -55 ... +175 C stg Square RBSOA Positive Thermal Coefficient of T Maximum Lead Temperature for Soldering 300 C L Vce(sat) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Package M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Advantages High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values High Frequency Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J UPS Motor Drives BV I = 250 A, V = 0V 950 V CES C GE SMPS V I = 250 A, V = V 3.5 5.5 V PFC Circuits GE(th) C CE GE Battery Chargers I V = V , V = 0V 25 A CES CE CES GE Welding Machines T = 150C 750 A J Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE V I = 60A, V = 15V, Note 1 2.4 2.9 V CE(sat) C GE T = 150C 2.9 V J 2018 IXYS CORPORATION, All Rights Reserved DS100452B(02/18)IXYH60N90C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 20 34 S fs C CE C 3285 pF ies C V = 25V, V = 0V, f = 1MHz 175 pF P oes CE GE 1 2 3 C 56 pF res Q 107 nC g(on) Q I = 60A, V = 15V, V = 0.5 V 30 nC ge C GE CE CES Q 50 nC gc t 30 ns e d(on) t 77 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 2.70 mJ I = 60A, V = 15V on C GE Dim. Millimeter Inches t 87 ns V = 0.5 V , R = 3 d(off) CE CES G Min. Max. Min. Max. t 88 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 1.55 2.50 mJ 1 f of A 2.2 2.6 .059 .098 2 t 30 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 74 ns J ri b 2.87 3.12 .113 .123 2 I = 60A, V = 15V E 4.70 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 3 t 103 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 165 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 2.15 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.20 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537