TM V = 650V XPT 650V IGBT IXYH75N65C3 CES TM I = 75A GenX3 C110 V 2.3V CE(sat) t = 60ns fi(typ) Extreme Light Punch through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V G GES C Tab V Transient 30 V E GEM I T = 25C (Chip Capability) 175 A C25 C I Terminal Current Limit 160 A G = Gate C = Collector LRMS E = Emitter Tab = Collector I T = 110C 75 A C110 C I T = 25C, 1ms 360 A CM C I T = 25C 30 A A C E T = 25C 300 mJ AS C SSOA V = 15V, T = 150C, R = 3 I = 150 A GE VJ G CM (RBSOA) Clamped Inductive Load V V Features CE CES t V = 15V, V = 360V, T = 150C 8 s sc GE CE J (SCSOA) R = 82, Non Repetitive G International Standard Package Optimized for 20-60kHz Switching P T = 25C 750 W C C Square RBSOA T -55 ... +175 C J Avalanche Rated T 175 C JM Short Circuit Capability T -55 ... +175 C High Current Handling Capability stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 6g Low Gate Drive Requirement Applications Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Motor Drives BV I = 250 A, V = 0V 650 V CES C GE SMPS PFC Circuits V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE Battery Chargers I V = V , V = 0V 10 A Welding Machines CES CE CES GE Lamp Ballasts T = 150C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 60A, V = 15V, Note 1 1.8 2.3 V CE(sat) C GE T = 150C 2.2 V J 2015 IXYS CORPORATION, All Rights Reserved DS100562C(4/15)IXYH75N65C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 25 44 S fs C CE Q S D2 R C 3410 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 190 pF 0P1 oes CE GE 4 R1R1R1R1 C 73 pF 1 2 3 res IXYS OPTION L1 C Q 122 nC g(on) E1 L Q I = 60A, V = 15V, V = 0.5 V 22 nC ge C GE CE CES Q 60 nC gc A1 b c b2 t 26 ns b4 d(on) 1 - Gate e 2,4 - Collector Inductive load, T = 25C t 65 ns J J M C A M ri 3 - Emitter I = 60A, V = 15V E 2.00 mJ C GE on V = 400V, R = 3 t 93 ns CE G d(off) t 60 ns Note 2 fi E 0.95 mJ f of t 26 ns d(on) Inductive load, T = 150C t 64 ns J ri I = 60A, V = 15V E 3.40 mJ C GE on V = 400V, R = 3 t 115 ns CE G d(off) t 64 ns Note 2 fi E 1.30 mJ off R 0.20 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537