Preliminary Technical Information TM V = 650V XPT 650V IGBT IXYH75N65C3H1 CES TM I = 75A GenX3 w/ Sonic C110 V 2.3V Diode CE(sat) t = 50ns fi(typ) Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V G GES C Tab V Transient 30 V E GEM I T = 25C (Chip Capability) 170 A C25 C I Terminal Current Limit 160 A G = Gate C = Collector LRMS E = Emitter Tab = Collector I T = 110C 75 A C110 C I T = 110C 62 A F110 C I T = 25C, 1ms 360 A CM C I T = 25C 30 A A C E T = 25C 300 mJ AS C SSOA V = 15V, T = 150C, R = 3 I = 150 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 8 s sc GE CE J International Standard Package (SCSOA) R = 82, Non Repetitive G Optimized for 20-60kHz Switching Square RBSOA P T = 25C 750 W C C Avalanche Rated T -55 ... +175 C J Short Circuit Capability T 175 C JM High Current Handling Capability T -55 ... +175 C Anti-Parallel Sonic Diode stg T Maximum Lead Temperature for Soldering 300 C L Advantages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Power Density M Mounting Torque 1.13/10 Nm/lb.in d Low Gate Drive Requirement Weight 6g Applications Power Inverters Symbol Test Conditions Characteristic Values UPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Motor Drives BV I = 250 A, V = 0V 650 V CES C GE SMPS PFC Circuits V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE Battery Chargers I V = V , V = 0V 50 A Welding Machines CES CE CES GE Lamp Ballasts T = 150C 4 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 60A, V = 15V, Note 1 1.8 2.3 V CE(sat) C GE T = 150C 2.2 V J 2013 IXYS CORPORATION, All Rights Reserved DS100573A(7/14)IXYH75N65C3H1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 25 42 S fs C CE C 3450 pF ies C V = 25V, V = 0V, f = 1MHz 307 pF oes CE GE C 70 pF res Q 123 nC g(on) Q I = 75A, V = 15V, V = 0.5 V 24 nC ge C GE CE CES Q 60 nC gc t 27 ns d(on) 1 - Gate 2,4 - Collector Inductive load, T = 25C t 67 ns J ri 3 - Emitter I = 60A, V = 15V E 2.8 mJ C GE on V = 400V, R = 3 t 93 ns CE G d(off) t 50 ns Note 2 fi E 1.0 mJ f of t 26 ns d(on) Inductive load, T = 150C t 57 ns J ri I = 60A, V = 15V E 3.3 mJ C GE on V = 400V, R = 3 t 108 ns CE G d(off) t 58 ns Note 2 fi E 1.3 mJ off R 0.20 C/W thJC R 0.21 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 50A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.8 V J I T = 150C 45 A RM J I = 50A, V = 0V, -di /dt = 900A/s, F GE F t T = 150C 150 ns rr J V = 300V R R 0.45 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537