The IXYH85N120A4 from IXYS is an insulated gate bipolar transistor (IGBT) XPT GEN 4 1200V TO247. It is built using an innovative 3-level technology, offering an industry-leading switch performance with low conduction and switching losses. This IGBT is suited for high-voltage applications such as motor control, solar inverters, and welding machines. It has a rated blocking voltage of 1200V and a nominal current of 85A, providing an exceptionally wide range of operation. This IGBT benefits from a wide range of safety features, such as anti-parallel diode, active short circuit protection, and fast recovery of both the diode and the IGBT. It also features a low turn-on leakage current for better energy efficiency, and is available in a wide variety of packaging options to suit different design requirements.