TM 1200V XPT IGBT V = 1200V IXYJ20N120C3D1 CES TM GenX3 w/ Diode I = 9A C110 V 3.4V CE(sat) (Electrically Isolated Tab) t = 108ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TM ISO TO-247 E153432 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C E V Transient 30 V Isolated Tab GEM I T = 25C 21 A C25 C G = Gate C = Collector I T = 110C 9 A C110 C E = Emitter I T = 110C 15 A F110 C I T = 25C, 1ms 84 A CM C I T = 25C 10 A A C E T = 25C 400 mJ AS C Features SSOA V = 15V, T = 150C, R = 10 I = 40 A GE VJ G CM Optimized for Low Switching Losses (RBSOA) Clamped Inductive Load V V CE CES Silicon Chip on Direct-Copper Bond P T = 25C 105 W (DCB) Substrate C C Isolated Mounting Surface T -55 ... +150 C J 2500V~ Electrical Isolation T 150 C JM Square RBSOA T -55 ... +150 C stg Positive Thermal Coefficient of Vce(sat) T Maximum Lead Temperature for Soldering 300 C L Anti-Parallel Ultra Fast Diode T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Avalanche Rated M Mounting Torque 1.13/10 Nm/lb.in. d V 50/60 Hz, RM, t = 1min 2500 V~ ISOL Advantages Weight 5 g High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Frequency Power Inverters BV I = 250 A, V = 0V 1200 V UPS CES C GE Motor Drives V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE SMPS I V = V , V = 0V 25 A PFC Circuits CES CE CES GE T = 125C 350 A Battery Chargers J Welding Machines I V = 0V, V = 20V 100 nA GES CE GE Lamp Ballasts V I = 20A, V = 15V, Note 1 3.4 V CE(sat) C GE T = 150C 4.0 V J 2013 IXYS CORPORATION, All Rights Reserved DS100486B(8/13)IXYJ20N120C3D1 Symbol Test Conditions Characteristic Values ISO TO-247 (IXYJ) OUTLINE (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7.0 11.5 S fs C CE C 1110 pF ies C V = 25V, V = 0V, f = 1MHz 120 pF oes CE GE C 27 pF res Q 53 nC g(on) Q I = 20A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Q 22 nC gc t 20 ns PINS: d(on) 1 = Gate t 29 ns Inductive load, T = 25C ri 2 = Collector J 3 = Emitter E 1.3 mJ I = 20A, V = 15V on C GE 4 = Isolated t 90 ns V = 0.5 V , R = 10 d(off) CE CES G t 108 ns fi Note 2 E 0.5 1.0 mJ f of t 20 ns d(on) Inductive load, T = 150C t 40 ns J ri I = 20A, V = 15V E 3.7 mJ C GE on V = 0.5 V , R = 10 t 115 ns CE CES G d(off) t 105 ns Note 2 fi E 0.7 mJ off R 1.19 C/W thJC R 0.15 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.00 V F I = 30A,V = 0V, Note 1 F GE T = 150C 1.75 V J I 9 A RM I = 30A,V = 0V, -di /dt = 100A/ s, T = 100C F GE F J t 195 ns V = 600V T = 100C rr R J R 1.25 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537