Preliminary Technical Information High Voltage V = 4500V IXYL60N450 CES TM XPT IGBT I = 38A C110 V 3.30V CE(sat) (Electrically Isolated Tab) TM ISOPLUS i5-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 4500 V CES J V T = 25C to 150C, R = 1M 4500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G E I T = 25C 90 A C25 C Isolated Tab C I T = 110C 38 A C110 C I T = 25C, 1ms 680 A CM C G = Gate E = Emitter SSOA V = 15V, T = 125C, R = 4.7 I = 120 A GE VJ G CM C = Collector (RBSOA) Clamped Inductive Load 1500 V P T = 25C 417 W C C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg Silicon Chip on Direct-Copper Bond T Maximum Lead Temperature for Soldering 300 C (DCB) Substrate L T Plastic Body for 10s 260 C Isolated Mounting Surface SOLD 4000V~ Electrical Isolation F Mounting Force 40..120 / 9..27 N/lb C High Blocking Voltage V 50/60 Hz, RM, t = 1min 4000 V~ ISOL High Peak Current Capability Low Saturation Voltage Weight 8 g Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 4500 V CES C GE V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE Switch-Mode and Resonant-Mode Power Supplies I V = 4000V, V = 0V 25 A CES CE GE Uninterruptible Power Supplies (UPS) Note 1, T = 90C 75 A J Laser Generators I V = 0V, V = 20V 300 nA Capacitor Discharge Circuits GES CE GE AC Switches V I = 60A, V = 15V, Note 1 2.64 3.30 V CE(sat) C GE T = 125C 3.46 V J 2016 IXYS CORPORATION, All Rights Reserved DS100578A(4/16)IXYL60N450 Symbol Test Conditions Characteristic Values TM ISOPLUS i5-Pak (IXYL) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J A U Q S g I = 60A, V = 10V, Note 1 32 54 S E A2 fS C CE C 7530 pF R ies C V = 25V, V = 0V, f = 1MHz 270 pF T D Q1 oes CE GE R1 C 115 pF res 4 3 1 2 R Integrated Gate Input Resistance 5.0 L1 Gi Q 366 nC L g(on) Q I = 60A, V = 15V, V = 1000V 48 nC ge C GE CE Q 138 nC c b1 gc b A1 b2 e1 e t 55 ns 1 = Gate d(on) Resistive Switching Times, T = 25C 2 = Source J 3 = Drain t 450 ns 4 = Isolated r I = 60A, V = 15V C GE t 450 ns d(off) V = 960V, R = 4.7 CE G t 1360 ns f SYM INCHES MILLIMETER MIN MAX MIN MAX t 60 ns d(on) Resistive Switching Times, T = 125C A 0.190 0.205 4.83 5.21 J t 664 ns A1 0.102 0.118 2.59 3.00 r I = 60A, V = 15V C GE A2 0.046 0.055 1.17 1.40 t 510 ns d(off) V = 960V, R = 4.7 b 0.045 0.055 1.14 1.40 CE G t 1070 ns f b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 R 0.30 C/W thJC c 0.020 0.029 0.51 0.74 R 0.15 C/W D 1.020 1.040 25.91 26.42 thCS E 0.770 0.799 19.56 20.29 e 0.150 BSC 3.81 BSC e1 0.450 BSC 11.43 BSC L 0.780 0.820 19.81 20.83 L1 0.080 0.102 2.03 2.59 Q 0.210 0.235 5.33 5.97 Q1 0.490 0.513 12.45 13.03 R 0.150 0.180 3.81 4.57 Notes: R1 0.100 0.130 2.54 3.30 1. Pulse test, t < 300 s, duty cycle, d < 2%. S 0.668 0.690 16.97 17.53 2. Device must be heatsunk for high-temperature leakage current T 0.801 0.821 20.34 20.85 measurements to avoid thermal runaway. U 0.065 0.080 1.65 2.03 PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537