Preliminary Technical Information TM 1200V XPT IGBT V = 1200V IXYN100N120B3H1 CES TM GenX3 w/ Diode I = 76A C110 V 2.6V CE(sat) t = 240ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 1200 V CES J E c V T = 25C to 150C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 165 A C25 C E c I T = 110C 76 A C110 C C I T = 110C 42 A F110 C I T = 25C, 1ms 480 A CM C G = Gate, C = Collector, E = Emitter I T = 25C 50 A c either emitter terminal can be used as A C Main or Kelvin Emitter E T = 25C 1.2 J AS C SSOA V = 15V, T = 150C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 690 W C C z T -55 ... +150 C Optimized for 5-30kHZ Switching J z T 150 C Square RBSOA JM z 2500V~ Isolation Voltage T -55 ... +150 C stg z Anti-Parallel Ultra Fast Diode V 50/60Hz t = 1min 2500 V~ z ISOL Positive Thermal Coefficient of I 1mA t = 1s 3000 V~ ISOL Vce(sat) z Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in. d z High Current Handling Capability Terminal Connection Torque 1.3/11.5 Nm/lb.in. z International Standard Package Weight 30 g Advantages z High Power Density Symbol Test Conditions Characteristic Values z Low Gate Drive Requirement (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 1200 V CES C GE Applications V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Power Inverters I V = V , V = 0V 50 A CES CE CES GE z UPS T = 125C 2.75 mA z J Motor Drives z SMPS I V = 0V, V = 20V 100 nA GES CE GE z PFC Circuits V I = 100A, V = 15V, Note 1 2.20 2.60 V z CE(sat) C GE Battery Chargers T = 150C 2.76 V z J Welding Machines z Lamp Ballasts 2013 IXYS CORPORATION, All Rights Reserved DS100520A(03/13)IXYN100N120B3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 52 S fs C CE C 6000 pF ies C V = 25V, V = 0V, f = 1MHz 367 pF oes CE GE C 127 pF res Q 250 nC g(on) Q I = 100A, V = 15V, V = 0.5 V 42 nC ge C GE CE CES Q 96 nC gc t 30 ns d(on) t 90 ns Inductive load, T = 25C ri J E 7.7 mJ I = 100A, V = 15V on C GE t 153 ns V = 0.5 V , R = 1 d(off) CE CES G t 240 ns fi Note 2 E 7.1 11.5 mJ f of t 29 ns d(on) Inductive load, T = 150C t 96 ns J ri I = 100A, V = 15V E 11.4 mJ C GE on V = 0.5 V , R = 1 t 190 ns CE CES G d(off) t 260 ns Note 2 fi E 10.1 mJ off R 0.18 C/W thJC R 0.05 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 2.7 V F F GE T = 125C 1.9 V J I 41 A RM I = 60A, V = 0V, T = 125C F GE J -di /dt = 700A/s, V = 600V t 420 ns F R rr R 0.42 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537