Preliminary Technical Information TM V = 650V 650V XPT IGBT IXYN100N65A3 CES TM I = 100A GenX3 C110 V 1.80V CE(sat) t = 122ns Ultra Low-Vsat PT IGBT fi(typ) for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E V T = 25C to 175C 650 V CES J G V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 170 A E C25 C I T = 110C 100 A C C110 C I T = 25C, 1ms 460 A CM C G = Gate, C = Collector, E = Emitter I T = 25C 50 A either emitter terminal can be used as A C Main or Kelvin Emitter E T = 25C 600 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 8 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Optimized for Low Conduction Losses P T = 25C 600 W miniBLOC, with Aluminium Nitride C C Isolation T -55 ... +175 C J International Standard Package T 175 C Isolation Voltage 2500V~ JM T -55 ... +175 C Optimized for up to 5kHz Switching stg Square RBSOA V 50/60Hz t = 1min 2500 V~ ISOL Avalanche Rated I 1mA t = 1s 3000 V~ ISOL Short Circuit Capability M Mounting Torque 1.5/13 Nm/lb.in High Current Handling Capability d Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250A, V = 0V 650 V CES C GE UPS Motor Drives V I = 250A, V = V 3.5 6.0 V GE(th) C CE GE SMPS I V = V , V = 0V 25 A Battery Chargers CES CE CES GE Low Frequency Power Inverters T = 150C 500 A J I V = 0V, V = 20V 200 nA GES CE GE V I = 70A, V = 15V, Note 1 1.44 1.80 V CE(sat) C GE T = 150C 1.62 V J 2014 IXYS CORPORATION, All Rights Reserved DS100547A(7/14)IXYN100N65A3 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 32 52 S fs C CE C 4920 pF ies C V = 25V, V = 0V, f = 1MHz 290 pF oes CE GE C 100 pF res Q 166 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 35 nC ge C GE CE CES Q 73 nC gc t 30 ns d(on) Inductive load, T = 25C t J 39 ns ri I = 50A, V = 15V E 2.0 mJ C GE on V = 400V, R = 2 t 155 ns CE G d(off) t 122 ns Note 2 fi E 1.6 mJ off t 28 ns d(on) t Inductive load, T = 150C 40 ns ri J E = 50A, V = 15V 2.6 mJ on C GE t 200 ns V = 400V, R = 2 d(off) CE G t 160 ns fi Note 2 E 2.4 mJ off R 0.25 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537