Preliminary Technical Information TM TM V = 650V XPT 650V GenX3 IXYN100N65C3H1 CES I = 90A w/ Sonic Diode C110 V 2.3V CE(sat) t = 60ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E V T = 25C to 175C 650 V G CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E I T = 25C 160 A C25 C C I T = 110C 90 A C110 C I T = 110C 50 A G = Gate, C = Collector, E = Emitter F110 C either emitter terminal can be used as I T = 25C, 1ms 420 A CM C Main or Kelvin Emitter I T = 25C 50 A A C E T = 25C 600 mJ AS C Features SSOA V = 15V, T = 150C, R = 3 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V International Standard Package CE CES miniBLOC, with Aluminium Nitride t V = 15V, V = 360V, T = 150C 7 s sc GE CE J Isolation (SCSOA) R = 10 , Non Repetitive 2500V~ Isolation Voltage G Anti-Parallel Sonic Diode P T = 25C 600 W C C Optimized for 20-60kHz Switching T -55 ... +175 C J Square RBSOA T 175 C JM Short Circuit Capability T -55 ... +175 C High Current Handling Capability stg V 50/60Hz t = 1min 2500 V~ ISOL I 1mA t = 1s 3000 V~ ISOL Advantages M Mounting Torque 1.5/13 Nm/lb.in d Terminal Connection Torque 1.3/11.5 Nm/lb.in High Power Density Low Gate Drive Requirement Weight 30 g Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 250 A, V = 0V 650 V CES C GE UPS Motor Drives V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE SMPS I V = V , V = 0V 50 A PFC Circuits CES CE CES GE Battery Chargers T = 150C 3 mA J Welding Machines I V = 0V, V = 20V 100 nA GES CE GE Lamp Ballasts High Frequency Power Inverters V I = 70A, V = 15V, Note 1 1.8 2.3 V CE(sat) C GE T = 150 C 2.2 V J 2014 IXYS CORPORATION, All Rights Reserved DS100568B(10/14)IXYN100N65C3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 55 S fs C CE C 4800 pF ies C V = 25V, V = 0V, f = 1MHz 475 pF oes CE GE C 102 pF res Q 172 nC g(on) Q I = 100A, V = 15V, V = 0.5 V 30 nC ge C GE CE CES Q 80 nC gc t 23 ns d(on) Inductive load, T = 25C t 42 ns J ri I = 50A, V = 15V E 1.30 mJ C GE on V = 400V, R = 3 t 107 ns CE G d(off) t 60 ns Note 2 fi E 0.83 1.30 mJ off t 24 ns d(on) Inductive load, T = 150C t 38 ns J ri I = 50A, V = 15V E 2.55 mJ C GE on V = 400V, R = 3 t 134 ns CE G d(off) t Note 2 66 ns fi E 1.15 mJ off R 0.25 C/W thJC R 0.05 C/W thCS Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 100A, V = 0V, Note 1 1.7 2.3 V F F GE T = 150 C 1.8 V J I I = 100A, V = 0V, T = 150C, 95 A RM F GE J -di /dt = 1500A/sV = 400V t 100 ns F R rr R 0.42 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS re- serves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537