TM 1200V XPT IGBT V = 1200V IXYN110N120A4 CES TM GenX4 I = 110A C110 V 1.80V CE(sat) t = 300ns fi(typ) Ultra Low-Vsat PT IGBT for up to 5kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V GES E V Transient 30 V GEM C I T = 25C (Chip Capability) 275 A C25 C I Terminal Current Limit 200 A G = Gate, C = Collector, E = Emitter LRMS either emitter terminal can be used as I T = 110C 110 A C110 C Main or Kelvin Emitter I T = 25C, 1ms 950 A CM C SSOA V = 15V, T = 125C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V V CES P T = 25C 830 W C C Features T -55 ... +175 C J T 175 C JM miniBLOC, with Aluminium Nitride T -55 ... +175 C stg Isolation International Standard Package V 50/60Hz t = 1min 2500 V~ ISOL Isolation Voltage 2500V~ I 1mA t = 1s 3000 V~ ISOL Optimized for Low Conduction Losses M Mounting Torque 1.5/13 Nm/lb.in Positive Thermal Coefficient of d Terminal Connection Torque 1.3/11.5 Nm/lb.in Vce(sat) High Current Handling Capability Weight 30 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 1200 V CES C GE Power Inverters V I = 3mA, V = V 4.5 6.5 V GE(th) C CE GE UPS Motor Drives I V = V , V = 0V 25 A CES CE CES GE SMPS T = 125 C 500 A J PFC Circuits I V = 0V, V = 20V 200 nA Battery Chargers GES CE GE Welding Machines V I = I , V = 15V, Note 1 1.45 1.80 V CE(sat) C C110 GE Lamp Ballasts T = 150 C 1.60 V J Inrush Current Protection Circuits 2020 Littelfuse, Inc. DS100982A(8/20)IXYN110N120A4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 48 80 S fs C CE C 6030 pF ies C V = 25V, V = 0V, f = 1MHz 340 pF oes CE GE C 225 pF res Q 305 nC g(on) Q I = I , V = 15V, V = 0.5 V 58 nC ge C C110 GE CE CES Q 148 nC gc t 42 ns d(on) t 36 ns Inductive load, T = 25C ri J E I = 50A, V = 15V 2.5 mJ on C GE t 550 ns V = 0.5 V , R = 2 d(off) CE CES G t 300 ns fi Note 2 E 8.4 mJ off t 35 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 50A, V = 15V E 4.4 mJ C GE on V = 0.5 V , R = 2 t 700 ns CE CES G d(off) t Note 2 590 ns fi E 14.0 mJ off R 0.18 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537