Advance Technical Information TM 1200V XPT IGBTs V = 1200V IXYN120N120C3 CES TM GenX3 I = 120A C110 V 3.20V CE(sat) t = 96ns fi(typ) High-Speed IGBTs for 20-50 kHz Switching E SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V GES E V Transient 30 V GEM C I T = 25C (Chip Capability) 240 A C25 C I Terminal Current Limit 200 A G = Gate, C = Collector, E = Emitter LRMS I T = 110C 120 A either emitter terminal can be used as C110 C Main or Kelvin Emitter I T = 25C, 1ms 700 A CM C I T = 25C 60 A A C E T = 25C 2 J AS C SSOA V = 15V, T = 150C, R = 1 I = 240 A GE VJ G CM Features (RBSOA) Clamped Inductive Load V V CE CES Optimized for Low Switching Losses P T = 25C 1200 W C C Square RBSOA T -55 ... +175 C miniBLOC, with Aluminium Nitride J T 175 C Isolation JM International Standard Package T -55 ... +175 C stg Isolation Voltage 2500V~ V 50/60Hz t = 1min 2500 V~ Positive Thermal Coefficient of ISOL I 1mA t = 1s 3000 V~ Vce(sat) ISOL Avalanche Rated M Mounting Torque 1.5/13 Nm/lb.in d High Current Handling Capability Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 1200 V CES C GE V I = 500 A, V = V 3.0 5.0 V GE(th) C CE GE High Frequency Power Inverters UPS I V = V , V = 0V 25 A CES CE CES GE Motor Drives T = 150C 1.5 mA J SMPS I V = 0V, V = 20V 100 nA PFC Circuits GES CE GE Battery Chargers V I = I , V = 15V, Note 1 2.55 3.20 V CE(sat) C C110 GE Welding Machines T = 150C 3.40 V J Lamp Ballasts 2013 IXYS CORPORATION, All Rights Reserved DS100560(9/13)IXYN120N120C3 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 68 S fs C CE C 9850 pF ies C V = 25V, V = 0V, f = 1MHz 580 pF oes CE GE C 218 pF res Q 412 nC g(on) Q I = I , V = 15V, V = 0.5 V 73 nC ge C C110 GE CE CES Q 180 nC gc t 35 ns d(on) t 77 ns Inductive load, T = 25C ri J E I = 100A, V = 15V 6.75 mJ on C GE t 176 ns V = 0.5 V , R = 1 d(off) CE CES G t 96 ns fi Note 2 E 5.10 mJ off t 33 ns d(on) Inductive load, T = 150C t 72 ns J ri I = 100A, V = 15V E 10.30 mJ C GE on V = 0.5 V , R = 1 t 226 ns CE CES G d(off) t Note 2 120 ns fi E 7.20 mJ off R 0.125 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537