Preliminary Technical Information TM 1200V XPT IGBT V = 1200V IXYN82N120C3 CES TM GenX3 I = 66A C110 V 3.2V CE(sat) t = 93ns fi(typ) High-Speed IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V G CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 120 A E c C25 C I T = 110C 66 A C C110 C I T = 25C, 1ms 380 A CM C G = Gate, C = Collector, E = Emitter I T = 25C 41 A c either emitter terminal can be used as A C Main or Kelvin Emitter E T = 25C 800 mJ AS C SSOA V = 15V, T = 150C, R = 2 I = 164 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 600 W C C z T -55 ... +175 C Optimized for Low Switching Losses J z Square RBSOA T 175 C JM z 2500V~ Isolation Voltage T -55 ... +175 C stg z Positive Thermal Coefficient of V 50/60Hz t = 1min 2500 V~ Vce(sat) ISOL z I 1mA t = 1s 3000 V~ Avalanche Rated ISOL z High Current Handling Capability M Mounting Torque 1.5/13 Nm/lb.in. z d International Standard Package Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Advantages z High Power Density z Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J High Frequency Power Inverters z UPS BV I = 250A, V = 0V 1200 V CES C GE z Motor Drives V I = 250A, V = V 2.5 4.5 V z SMPS GE(th) C CE GE z PFC Circuits I V = V , V = 0V 25 A CES CE CES GE z Battery Chargers T = 150C 500 A z J Welding Machines z I V = 0V, V = 20V 100 nA Lamp Ballasts GES CE GE V I = 82A, V = 15V, Note 1 2.75 3.20 V CE(sat) C GE T = 150C 3.76 V J 2012 IXYS CORPORATION, All Rights Reserved DS100389A(12/12)IXYN82N120C3 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4060 pF ies C V = 25V, V = 0V, f = 1MHz 285 pF oes CE GE C 110 pF res Q 215 nC g(on) Q I = 75A, V = 15V, V = 0.5 V 26 nC ge C GE CE CES Q 84 nC gc t 29 ns d(on) t 78 ns Inductive load, T = 25C ri J E 4.95 mJ I = 80A, V = 15V on C GE t 192 ns V = 0.5 V , R = 2 d(off) CE CES G t 93 ns fi Note 2 E 2.78 5.00 mJ f of t 29 ns d(on) Inductive load, T = 125C t 90 ns J ri I = 80A, V = 15V E 7.45 mJ C GE on V = 0.5 V , R = 2 t 200 ns CE CES G d(off) t 95 ns Note 2 fi E 3.70 mJ off R 0.25 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537