TM 1200V XPT IGBT V = 1200V IXYN82N120C3H1 CES TM GenX3 w/ Diode I = 46A C110 V 3.2V CE(sat) t = 93ns fi(typ) High-Speed IGBT for 20-50 kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G V T = 25C to 150C 1200 V CES J V T = 25C to 150C, R = 1M 1200 V CGR J GE V Continuous 20 V GES V Transient 30 V E GEM C I T = 25C (Chip Capability) 105 A C25 C I T = 110C 46 A C110 C G = Gate, C = Collector, E = Emitter I T = 110C 42 A F110 C either emitter terminal can be used as I T = 25C, 1ms 320 A Main or Kelvin Emitter CM C SSOA V = 15V, T = 125C, R = 2 I = 164 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 500 W Features C C T -55 ... +150 C J Optimized for Low Switching Losses T 150 C JM Square RBSOA T -55 ... +150 C Isolation Voltage 2500V~ stg Anti-Parallel Ultra Fast Diode V 50/60Hz t = 1min 2500 V~ ISOL Positive Thermal Coefficient of I 1mA t = 1s 3000 V~ ISOL Vce(sat) M Mounting Torque 1.5/13 Nm/lb.in. High Current Handling Capability d Terminal Connection Torque 1.3/11.5 Nm/lb.in. International Standard Package Weight 30 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1200 V High Frequency Power Inverters CES C GE UPS V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Motor Drives I V = V , V = 0V 50 A SMPS CES CE CES GE PFC Circuits T = 125C 3 mA J Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE Welding Machines Lamp Ballasts V I = 82A, V = 15V, Note 1 2.75 3.20 V CE(sat) C GE T = 125C 3.50 V J 2018 IXYS CORPORATION, All Rights Reserved DS100352E(7/18)IXYN82N120C3H1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4060 pF ies C V = 25V, V = 0V, f = 1MHz 285 pF oes CE GE C 110 pF res Q 215 nC g(on) Q I = 75A, V = 15V, V = 0.5 V 26 nC ge C GE CE CES Q 84 nC gc t 29 ns d(on) t 78 ns Inductive load, T = 25C ri J E 4.95 mJ I = 80A, V = 15V on C GE t 192 280 ns V = 0.5 V , R = 2 d(off) CE CES G t 93 ns fi Note 2 E 2.78 5.00 mJ f of t 29 ns d(on) Inductive load, T = 125C t 90 ns J ri I = 80A, V = 15V E 7.45 mJ C GE on V = 0.5 V , R = 2 t 200 ns CE CES G d(off) t 95 ns Note 2 fi E 3.70 mJ off R 0.25 C/W thJC R 0.05 C/W thCS Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 60A, V = 0V, Note 1 2.7 V F F GE T = 125C 1.9 V J I 41 A RM I = 60A, V = 0V, T = 125C F GE J -di /dt = 700A/s, V = 600V t 420 ns F R rr R 0.42 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537