Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYP15N65C3 CES TM GenX3 I = 15A C110 V 2.5V CE(sat) t = 28ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G C Tab V Continuous 20 V E GES V Transient 30 V GEM I T = 25C 38 A G = Gate C = Collector C25 C I T = 110C 15 A E = Emitter Tab = Collector C110 C I T = 25C, 1ms 80 A CM C I T = 25C 5 A A C E T = 25C 100 mJ AS C Features SSOA V = 15V, T = 150C, R = 20 I = 30 A GE VJ G CM Optimized for 20-60kHz Switching (RBSOA) Clamped Inductive Load V V CE CES Square RBSOA t V = 15V, V = 360V, T = 150C 8 s Avalanche Rated sc GE CE J (SCSOA) R = 82, Non Repetitive Short Circuit Capability G International Standard Package P T = 25C 200 W C C T -55 ... +175 C J Advantages T 175 C JM T -55 ... +175 C stg High Power Density T Maximum Lead Temperature for Soldering 300 C Extremely Rugged L Low Gate Drive Requirement T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Applications Weight 3g Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 650 V CES C GE Battery Chargers V I = 250 A, V = V 3.5 6.0 V Welding Machines GE(th) C CE GE Lamp Ballasts I V = V , V = 0V 10 A CES CE CES GE High Frequency Power Inverters T = 150C 150 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 15A, V = 15V, Note 1 1.96 2.50 V CE(sat) C GE T = 150C 2.45 V J 2014 IXYS CORPORATION, All Rights Reserved DS100542A(7/14)IXYP15N65C3 Symbol Test Conditions Characteristic Values TO-220 (IXYP) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 15A, V = 10V, Note 1 5.0 8.5 S fs C CE C 583 pF ies C V = 25V, V = 0V, f = 1MHz 37 pF oes CE GE C 13 pF res Q 19 nC g(on) Q I = 15A, V = 15V, V = 0.5 V 4 nC ge C GE CE CES Q 10 nC gc t 15 ns d(on) Pins: 1 - Gate t 20 ns Inductive load, T = 25C ri J 2 - Collector E 0.27 mJ I = 15A, V = 15V on 3 - Emitter C GE t 68 ns V = 400V, R = 20 d(off) CE G t 28 ns fi Note 2 E 0.23 0.40 mJ f of t 15 ns d(on) Inductive load, T = 150C t 21 ns J ri I = 15A, V = 15V E 0.53 mJ C GE on V = 400V, R = 20 t 80 ns CE G d(off) t 42 ns Note 2 fi E 0.24 mJ off R 0.75 C/W thJC R 0.50 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537