TM XPT 650V IGBT V = 650V IXYA20N65C3D1 CES TM GenX3 w/Diode I = 20A IXYP20N65C3D1 C110 V 2.50V CE(sat) t = 28ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E V T = 25C to 175C 650 V CES J C (Tab) V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V TO-220AB (IXYP) GES V Transient 30 V GEM I T = 25C 50 A C25 C I T = 110C 20 A C110 C I T = 110C 18 A F110 C G I T = 25C, 1ms 105 A C CM C C (Tab) E I T = 25C 10 A A C E T = 25C 200 mJ AS C G = Gate C = Collector SSOA V = 15V, T = 150C, R = 20 I = 40 A GE VJ G CM E = Emitter Tab = Collector (RBSOA) Clamped Inductive Load V V CE CES t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Features (SCSOA) R = 82, Non Repetitive G Optimized for 20-60kHz Switching P T = 25C 200 W C C Square RBSOA T -55 ... +175 C J Avalanche Rated T 175 C Anti-Parallel Fast Diode JM Short Circuit Capability T -55 ... +175 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque (TO-220) 1.13/10 Nm/lb.in d F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C High Power Density Extremely Rugged Weight TO-263 2.5 g Low Gate Drive Requirement TO-220 3.0 g Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters BV I = 250 A, V = 0V 650 V CES C GE UPS Motor Drives V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE SMPS I V = V , V = 0V 10 A CES CE CES GE PFC Circuits T = 150C 400 A J Battery Chargers I V = 0V, V = 20V 100 nA Welding Machines GES CE GE Lamp Ballasts V I = 20A, V = 15V, Note 1 2.27 2.50 V CE(sat) C GE High Frequency Power Inverters T = 150C 2.44 V J 2015 IXYS CORPORATION, All Rights Reserved DS100576C(3/15)IXYA20N65C3D1 IXYP20N65C3D1 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7 12 S fs C CE C 822 pF ies C V = 25V, V = 0V, f = 1MHz 67 pF oes CE GE C 19 pF res Q 30 nC g(on) 1. Gate Q I = 20A, V = 15V, V = 0.5 V 6 nC ge C GE CE CES 2. Collector Q 15 nC 3. Emitter gc 4. Collector Bottom Side t 19 ns d(on) t 34 ns Inductive load, T = 25C ri J E 0.43 mJ I = 20A, V = 15V on C GE Dim. Millimeter Inches Min. Max. Min. Max. t 80 ns V = 400V, R = 20 d(off) CE G A 4.06 4.83 .160 .190 t 28 ns b 0.51 0.99 .020 .039 fi Note 2 b2 1.14 1.40 .045 .055 E 0.35 0.65 mJ f of c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 t 18 ns d(on) D 8.64 9.65 .340 .380 D1 8.00 8.89 .280 .320 Inductive load, T = 150C t 33 ns J ri E 9.65 10.41 .380 .405 I = 20A, V = 15V E 0.70 mJ C GE on E1 6.22 8.13 .270 .320 V = 400V, R = 20 e 2.54 BSC .100 BSC t 96 ns CE G d(off) L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 t 36 ns Note 2 fi L2 1.02 1.40 .040 .055 E 0.40 mJ L3 1.27 1.78 .050 .070 off L4 0 0.13 0 .005 R 0.65 C/W thJC R TO-220 0.50 C/W thCS TO-220 Outline Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V, Note 1 2.5 V F F GE T = 150C 1.5 V J I 11 A RM I = 20A, V = 0V, F GE -di /dt = 300A/s, V = 400V, T = 150C F R J t 135 ns rr Pins: 1 - Gate 2,4 - Collector R 1.85 C/W thJC 3 - Emitter Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537