Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYP20N65C3D1M CES TM GenX3 w/Diode I = 9A C110 V 2.5V CE(sat) (Electrically Isolated Tab) t = 28ns fi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE G V Continuous 20 V C GES E Isolated Tab V Transient 30 V GEM I T = 25C 18 A G = Gate C = Collector C25 C I T = 110C 9 A E = Emitter C110 C I T = 110C 13 A F110 C I T = 25C, 1ms 105 A CM C I T = 25C 10 A A C E T = 25C 200 mJ AS C Features SSOA V = 15V, T = 150C, R = 20 I = 40 A GE VJ G CM Optimized for 20-60kHz Switching (RBSOA) Clamped Inductive Load V V CE CES Plastic Overmolded Tab for Electrical t V = 15V, V = 360V, T = 150C 10 s sc GE CE J Isolation (SCSOA) R = 82, Non Repetitive G Square RBSOA Avalanche Rated P T = 25C 50 W C C Anti-Parallel Fast Diode T -55 ... +175 C Short Circuit Capability J T 175 C 2500V~ Electrical Isolation JM International Standard Package T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C Advantages SOLD V 50/60 Hz, 1 Minute 2500 V~ ISOL High Power Density Extremely Rugged M Mounting Torque 1.13 / 10 Nm/lb.in d Low Gate Drive Requirement Weight 2.5 g Applications Symbol Test Conditions Characteristic Values Power Inverters (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. UPS J Motor Drives BV I = 250 A, V = 0V 650 V CES C GE SMPS V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE PFC Circuits Battery Chargers I V = V , V = 0V 10 A CES CE CES GE Welding Machines T = 150C 400 A J Lamp Ballasts I V = 0V, V = 20V 100 nA GES CE GE High Frequency Power Inverters V I = 20A, V = 15V, Note 1 2.27 2.50 V CE(sat) C GE T = 150C 2.44 V J 2018 IXYS CORPORATION, All Rights Reserved DS100550B(11/18)IXYP20N65C3D1M Symbol Test Conditions Characteristic Values OVERMOLDED TO-220 (IXYP) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 7 12 S fs C CE C 822 pF ies C V = 25V, V = 0V, f = 1MHz 67 pF oes CE GE C 19 pF res Q 30 nC g(on) Q I = 20A, V = 15V, V = 0.5 V 6 nC ge C GE CE CES Q 15 nC gc t 19 ns d(on) Pins: 1 - Gate t 34 ns Inductive load, T = 25C ri J 2 - Collector E 0.43 mJ I = 20A, V = 15V on 3 - Emitter C GE t 80 ns V = 400V, R = 20 d(off) CE G t 28 ns fi Note 2 E 0.35 0.65 mJ f of t 18 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 20A, V = 15V E 0.70 mJ C GE on V = 400V, R = 20 t 96 ns CE G d(off) t 36 ns Note 2 fi E 0.40 mJ off R 3.00 C/W thJC Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J V I = 10A, V = 0V, Note 1 3.0 V F F GE T = 125C 1.7 V J I 2.5 A RM I = 12A, V = 0V, F GE -di /dt = 100A/s, V = 100V, T = 125C F R J t 110 ns rr t 30 ns I = 1A, V = 0V, -di /dt = 100A/s, V = 30V rr F GE F R R 4.0 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537