TM 1200V XPT V = 1200V IXYP30N120C3 CES TM GenX3 IGBTs I = 30A IXYH30N120C3 C110 V 3.3V CE(sat) t = 88ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-220 (IXYP) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J G C Tab E V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V GES TO-247 AD (IXYH) V Transient 30 V GEM I T = 25C 75 A C25 C I T = 110C 30 A C110 C I T = 25C, 1ms 145 A CM C G I T = 25C 20 A C A C Tab E E T = 25C 400 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 60 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load V V E = Emitter Tab = Collector CE CES P T = 25C 500 W C C T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C stg High Voltage Package T Maximum Lead Temperature for Soldering 300 C L Optimized for Low Switching Losses T 1.6 mm (0.062in.) from Case for 10s 260 C Square RBSOA SOLD Positive Thermal Coefficient of M Mounting Torque 1.13/10 Nm/lb.in d Vce(sat) Avalanche Rated Weight TO-220 3 g TO-247 6 g International Standard Packages Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 1200 V CES C GE High Frequency Power Inverters V I = 250 A, V = V 3.0 5.0 V UPS GE(th) C CE GE Motor Drives I V = V , V = 0V 25 A CES CE CES GE SMPS T = 150C 750 A J PFC Circuits Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE Welding Machines V I = 30A, V = 15V, Note 1 3.3 V CE(sat) C GE Lamp Ballasts T = 150C 3.7 V J 2013 IXYS CORPORATION, All Rights Reserved DS100385D(9/13)IXYP30N120C3 IXYH30N120C3 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 10 17 S fs C CE C 1640 pF ies C V = 25V, V = 0V, f = 1MHz 110 pF oes CE GE C 38 pF res Q 69 nC g(on) Q I = 30A, V = 15V, V = 0.5 V 9 nC ge C GE CE CES Q 34 nC gc t 19 ns d(on) t 40 ns Inductive load, T = 25C ri J E 2.6 mJ I = 30A, V = 15V Pins: 1 - Gate 2 - Collector on C GE 3 - Emitter t 130 ns V = 0.5 V , R = 10 d(off) CE CES G t 88 ns fi Note 2 E 1.1 mJ f of t 19 ns d(on) Inductive load, T = 150C t 52 ns J ri I = 30A, V = 15V E 6.0 mJ C GE on V = 0.5 V , R = 10 t 156 ns CE CES G d(off) t 140 ns Note 2 fi E 1.6 mJ off R 0.30 C/W thJC R TO-220 0.50 C/W thCS TO-247 Outline R TO-247 0.21 C/W thCS P 1 2 3 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G e Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537