Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYA50N65C3 CES TM GenX3 I = 50A IXYP50N65C3 C110 V 2.10V IXYH50N65C3 CE(sat) t = 26ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 (IXYA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXYP) V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V CGR J GE V Continuous 20 V GES V Transient 30 V G GEM C C (Tab) E I T = 25C 132 A C25 C I T = 110C 50 A C110 C TO-247 AD (IXYH) I T = 25C, 1ms 250 A CM C I T = 25C 25 A A C E T = 25C 400 mJ AS C SSOA V = 15V, T = 150C, R = 5 I = 100 A GE VJ G CM G C (RBSOA) Clamped Inductive Load V V C (Tab) CE CES E t V = 15V, V = 360V, T = 150C 8 s sc GE CE J G = Gate C = Collector (SCSOA) R = 82, Non Repetitive E = Emitter Tab = Collector G P T = 25C 600 W C C Features T -55 ... +175 C J T 175 C JM Optimized for 20-60kHz Switching T -55 ... +175 C Square RBSOA stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Short Circuit Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Advantages M Mounting Torque (TO-247 & TO-220) 1.13 / 10 Nm/lb.in d Weight TO-263 2.5 g High Power Density TO-220 3.0 g Extremely Rugged TO-247 6.0 g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Inverters UPS BV I = 250 A, V = 0V 650 V CES C GE Motor Drives V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE SMPS I V = V , V = 0V 15 A PFC Circuits CES CE CES GE Battery Chargers T = 150C 250 A J Welding Machines I V = 0V, V = 20V 100 nA GES CE GE Lamp Ballasts V I = 36A, V = 15V, Note 1 1.73 2.10 V High Frequency Power Inverters CE(sat) C GE T = 150C 2.10 V J 2014 IXYS CORPORATION, All Rights Reserved DS100552C(9/14)IXYA50N65C3 IXYP50N65C3 IXYH50N65C3 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 36A, V = 10V, Note 1 18 30 S fs C CE C 2290 pF ies C V = 25V, V = 0V, f = 1MHz 135 pF oes CE GE C 50 pF res Q 86 nC g(on) Q I = 36A, V = 15V, V = 0.5 V 14 nC ge C GE CE CES Q 40 nC gc t 20 ns d(on) t 36 ns Inductive load, T = 25C ri J E 0.80 mJ I = 36A, V = 15V Pins: 1 - Gate 2 - Collector on C GE 3 - Emitter t 90 ns V = 400V, R = 5 d(off) CE G t 26 ns fi Note 2 E 0.47 0.80 mJ f of t 19 ns d(on) Inductive load, T = 150C t 37 ns J ri I = 36A, V = 15V E 1.60 mJ C GE on V = 400V, R = 5 t 113 ns CE G d(off) t 32 ns Note 2 fi E 0.70 mJ off R 0.25 C/W thJC R TO-220 0.50 C/W thCS TO-247 Outline R TO-247 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G TO-263 Outline 1 - Gate 2,4 - Collector 3 - Emitter 1 = Gate 2 = Collector 3 = Emitter 4 = Collector PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537