TM 1200V XPT IGBT V = 1200V IXYR100N120C3 CES TM GenX3 I = 56A C110 V 3.50V CE(sat) (Electrically Isolated Tab) t = 110ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TM ISOPLUS247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V GES G V Transient 30 V C GEM Isolated Tab E I T = 25C (Chip Capability) 110 A C25 C I T = 110C 56 A C110 C G = Gate C = Collector I T = 25C, 1ms 450 A CM C E = Emitter I T = 25C 50 A A C E T = 25C 1.2 J AS C SSOA V = 15V, T = 150C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features P T = 25C 484 W C C Optimized for Low Switching Losses T -55 ... +175 C J Square RBSOA T 175 C JM Silicon Chip on Direct-Copper Bond T -55 ... +175 C (DCB) Substrate stg Isolated Mounting Surface T Maximum Lead Temperature for Soldering 300 C L 2500V~ Electrical Isolation T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Positive Thermal Coefficient of V 50/60 Hz, 1 Minute 2500 V~ Vce(sat) ISOL Avalanche Rated F Mounting Force 20..120/4.5..27 N/lb. High Current Handling Capability C Weight 5 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250 A, V = 0V 1200 V CES C GE High Frequency Power Inverters UPS V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE Motor Drives I V = V , V = 0V 10 A CES CE CES GE SMPS T = 150C 1.25 mA PFC Circuits J Battery Chargers I V = 0V, V = 20V 100 nA GES CE GE Welding Machines V I = 100A, V = 15V, Note 1 2.96 3.50 V Lamp Ballasts CE(sat) C GE T = 150C 3.78 V J 2018 IXYS CORPORATION, All Rights Reserved DS100406C(4/18)IXYR100N120C3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4950 pF ies C V = 25V, V = 0V, f = 1MHz 356 pF oes CE GE C 120 pF res Q 260 nC g(on) Q I = I , V = 15V, V = 0.5 V 47 nC ge C C110 GE CE CES Q 102 nC gc t 27 ns d(on) t 110 ns Inductive load, T = 25C ri J E 12.00 mJ I = I , V = 15V on C C110 GE t 120 ns V = 0.5 V , R = 1 d(off) CE CES G t 110 ns fi Note 2 E 4.90 mJ off t 27 ns d(on) Inductive load, T = 125C t 116 ns J ri I = I , V = 15V E 15.00 mJ C C110 GE on t V = 0.5 V , R = 1 146 ns CE CES G d(off) t 125 ns Note 2 fi E 6.15 mJ off R 0.31 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537