Advance Technical Information TM High Voltage XPT V = 4500V IXYT30N450HV CES IGBT IXYH30N450HV I = 30A C110 V 3.9V CE(sat) TO-268HV (IXYT) G E C (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 4500 V CES C TO-247HV (IXYH) V T = 25C to 150C, R = 1M 4500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C 60 A C25 C G I T = 110C 30 A E C110 C C (Tab) C I T = 25C, 1ms 200 A CM C SSOA V = 15V, T = 125C, R = 10 I = 90 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load 3600 V E = Emitter Tab = Collector P T = 25C 430 W C C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg High Voltage Packages T Maximum Lead Temperature for Soldering 300 C L High Blocking Voltage T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Peak Current Capability M Mounting Torque (TO-247HV) 1.13/10 Nm/lb.in Low Saturation Voltage d Weight TO-268HV 4.0 g TO-247HV 6.0 g Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 4500 V CES C GE V I = 250A, V = V 3.0 5.0 V Switch-Mode and Resonant-Mode GE(th) C CE GE Power Supplies I V = V , V = 0V 25 A CES CE CES GE Uninterruptible Power Supplies (UPS) T = 125C 1 mA J Laser Generators I V = 0V, V = 20V 200 nA Capacitor Discharge Circuits GES CE GE AC Switches V I = 30A, V = 15V, Note 1 3.2 3.9 V CE(sat) C GE T = 125C 4.5 V J 2014 IXYS CORPORATION, All Rights Reserved DS100614(5/14) IXYT30N450HV IXYH30N450HV Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J E A E1 L2 C2 g I = 30A, V = 10V, Note 1 11 18 S fS C CE 3 D1 3 D H D2 C 1840 pF ies 1 2 2 1 D3 A1 C V = 25V, V = 0V, f = 1MHz 83 pF L4 oes CE GE C e e b C 35 pF res Q 88 nC g PINS: 1 - Gate 2 - Emitter Q I = 30A, V = 15V, V = 1000V 11 nC ge C GE CE 3 - Collector Q 40 nC gc L3 A2 t 38 ns L d(on) Resistive Switching Times, T = 25C J t 318 ns r I = 30A, V = 15V C GE t 168 ns d(off) V = 960V, R = 10 CE G t 1220 ns f t 42 ns d(on) Resistive Switching Times, T = 125C J t 590 ns r I = 30A, V = 15V C GE t 180 ns d(off) V = 960V, R = 10 CE G t 1365 ns f R 0.29 C/W thJC R TO-247HV 0.21 C/W thCS TO-247HV Outline E A E1 R 0P 0P1 A2 Q S Note: 1. Pulse test, t < 300s, duty cycle, d < 2%. D1 D 4 D2 1 2 3 L1 A3 D3 2X E2 E3 A1 L 4X e b b1 c e1 3X 3X PINS: 1 - Gate 2 - Emitter 3, 4 - Collector ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537