Preliminary Technical Information TM XPT 650V IGBT V = 650V IXYT30N65C3H1HV CES TM GenX3 w/ Sonic I = 30A IXYH30N65C3H1 C110 Diode V 2.7V CE(sat) t = 24ns fi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching TO-268HV Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 650 V CES J E V T = 25C to 175C, R = 1M 650 V CGR J GE C (Tab) V Continuous 20 V GES V Transient 30 V GEM TO-247 AD I T = 25C 60 A C25 C I T = 110C 30 A C110 C I T = 110C 29 A F110 C I T = 25C, 1ms 118 A CM C G I T = 25C 10 A A C C Tab E E T = 25C 300 mJ AS C SSOA V = 15V, T = 150C, R = 10 I = 60 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load V V CE CES E = Emitter Tab = Collector t V = 15V, V = 360V, T = 150C 8 s sc GE CE J (SCSOA) R = 82, Non Repetitive G Features P T = 25C 270 W C C T -55 ... +175 C J Optimized for 20-60kHz Switching T 175 C Square RBSOA JM T -55 ... +175 C High Voltage stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Short Circuit Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Anti-Parallel Sonic Diode M Mounting Torque 1.13/10 Nm/lb.in d Weight TO-220 4 g Advantages TO-247 6 g High Power Density Extremely Rugged Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 650 V CES C GE V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE Power Inverters UPS I V = V , V = 0V 50 A CES CE CES GE Motor Drives T = 150C 4 mA J SMPS I V = 0V, V = 20V 100 nA GES CE GE PFC Circuits Battery Chargers V I = 30A, V = 15V, Note 1 2.35 2.70 V CE(sat) C GE T = 150C 2.58 V Welding Machines J Lamp Ballasts High Frequency Power Inverters 2014 IXYS CORPORATION, All Rights Reserved DS100545A(7/14)IXYT30N65C3H1HV IXYH30N65C3H1 Symbol Test Conditions Characteristic Values TO-268HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 30A, V = 10V, Note 1 11 19 S fs C CE C 1225 pF ies C V = 25V, V = 0V, f = 1MHz 173 pF oes CE GE C 28 pF res Q 44 nC g(on) Q I = 30A, V = 15V, V = 0.5 V 7 nC ge C GE CE CES Q 24 nC gc 1 - Gate t 21 ns d(on) 2 - Emitter 3 - Collector t 42 ns Inductive load, T = 25C ri J E 1.00 mJ I = 30A, V = 15V on C GE t 75 ns V = 400V, R = 10 d(off) CE G t 24 ns fi Note 2 E 0.27 mJ f of t 19 ns d(on) Inductive load, T = 150C t 40 ns J ri I = 30A, V = 15V E 1.50 mJ C GE on V = 400V, R = 10 t 90 ns CE G d(off) t 30 ns Note 2 fi E 0.41 mJ off R 0.55 C/W thJC R TO-247 0.21 C/W thCS TO-247 (IXYH) Outline Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 30A, V = 0V, Note 1 2.5 V F F GE T = 150C 2.15 V J I T = 150C 25 A RM I = 30A, V = 0V, J F GE t T = 150C 120 ns 1 - Gate rr J -di /dt = 500A/s, V = 400V F R 2,4 - Collector 3 - Emitter R 0.80 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537