TM XPT 900V IGBT V = 900V IXYT80N90C3 CES TM GenX3 I = 80A IXYH80N90C3 C110 V 2.7V CE(sat) t = 86ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-268 (IXYT) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 175C 900 V CES J V T = 25C to 175C, R = 1M 900 V CGR J GE TO-247 (IXYH) V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 165 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 80 A G C110 C C C (Tab) I T = 25C, 1ms 360 A E CM C SSOA V = 15V, T = 150C, R = 2 I = 160 A GE VJ G CM G = Gate C = Collector (RBSOA) Clamped Inductive Load V V CE CES E = Emiiter Tab = Collector P T = 25C 830 W C C T -55 ... +175 C J T 175 C JM T -55 ... +175 C Features stg T Maximum Lead Temperature for Soldering 300 C L Optimized for Low Switching Losses T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Square RBSOA M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Positive Thermal Coefficient of d Vce(sat) Weight TO-268 4 g International Standard Packages TO-247 6 g Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. High Power Density J Low Gate Drive Requirement BV I = 250 A, V = 0V 950 V CES C GE V I = 250 A, V = V 3.5 5.5 V GE(th) C CE GE Applications I V = V , V = 0V 25 A CES CE CES GE T = 150C 750 A J High Frequency Power Inverters UPS I V = 0V, V = 20V 100 nA GES CE GE Motor Drives V I = 60A, V = 15V, Note 1 2.3 2.7 V SMPS CE(sat) C GE T = 150C 2.9 V PFC Circuits J Battery Chargers Welding Machines Lamp Ballasts 2015 IXYS CORPORATION, All Rights Reserved DS100446B(12/15)IXYT80N90C3 IXYH80N90C3 Symbol Test Conditions Characteristic Values TO-268 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 23 38 S fs C CE C 4550 pF ies C V = 25V, V = 0V, f = 1MHz 243 pF oes CE GE C 77 pF res Q 145 nC g(on) Q I = 80A, V = 15V, V = 0.5 V 42 nC ge C GE CE CES Q 65 nC gc Terminals: 1 - Gate 2,4 - Collector t 34 ns d(on) 3 - Emitter t 103 ns Inductive load, T = 25C ri J E 4.3 mJ I = 80A, V = 15V on C GE t 90 ns V = 0.5 V , R = 2 d(off) CE CES G t 86 ns fi Note 2 E 1.9 2.7 mJ f of t 34 ns d(on) Inductive load, T = 150C t 100 ns J ri I = 80A, V = 15V E 5.7 mJ C GE on V = 0.5 V , R = 2 t 103 ns CE CES G d(off) t 98 ns Note 2 fi E 2.5 mJ off R 0.18 C/W thJC R TO-247 0.21 C/W thCS TO-247 Outline P 1 2 3 Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G e Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537