TM 1200V XPT V = 1200V IXYT85N120A4HV CES TM GenX4 IGBT I = 85A C110 V 1.8V CE(sat) t = 280ns fi(typ) Ultra Low-Vsat PT IGBT for up to 5kHz Switching TO-268HV (IXYT..HV) G E Symbol Test Conditions Maximum Ratings C (Tab) V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V G = Gate C = Collector CGR J GE E = Emitter Tab = Collector V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability) 300 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 85 A C110 C Features I T = 25C, 1ms 520 A CM C SSOA V = 15V, T = 125C, R = 5 I = 170 A Optimized for Low Conduction Losses GE VJ G CM Positive Thermal Coefficient of (RBSOA) Clamped Inductive Load V 0.8 V CE CES Vce(sat) P T = 25C 1150 W C C International Standard Package T -55 ... +175 C J T 175 C JM Advantages T -55 ... +175 C stg High Power Density T Plastic Body for 10s 260 C SOLD Low Gate Drive Requirement Weight 4 g Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Battery Chargers J Welding Machines BV I = 250 A, V = 0V 1200 V CES C GE Lamp Ballasts V I = 250 A, V = V 4.0 6.5 V Inrush Current Protector Circuits GE(th) C CE GE I V = V , V = 0V 10 A CES CE CES GE T = 150 C 5 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 85A, V = 15V, Note 1 1.5 1.8 V CE(sat) C GE T = 150 C 1.7 V J 2020 Littelfuse, Inc. DS101001A(4/20)IXYT85N120A4HV Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 46 60 S fs C CE C 3700 pF ies C V = 25V, V = 0V, f = 1MHz 210 pF oes CE GE C 140 pF res Q 200 nC g(on) Q I = 85A, V = 15V, V = 0.5 V 30 nC ge C GE CE CES Q 80 nC gc t 40 ns d(on) t 40 ns Inductive load, T = 25C ri J E 4.9 mJ I = 60A, V = 15V on C GE t 400 ns V = 0.5 V , R = 5 d(off) CE CES G t 280 ns fi Note 2 E 8.3 mJ off t 30 ns d(on) Inductive load, T = 150C t 43 ns J ri I = 60A, V = 15V E 8.3 mJ C GE on V = 0.5 V , R = 5 t 460 ns CE CES G d(off) t 530 ns Note 2 fi E 13.7 mJ off R 0.13 C/W thJC Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537