TM 1200V XPT IGBT V = 1200V IXYK100N120C3 CES TM GenX3 I = 100A IXYX100N120C3 C110 V 3.50V CE(sat) t = 110ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C V T = 25C to 175C 1200 V E CES J Tab V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V PLUS247 (IXYX) GES V Transient 30 V GEM I T = 25C (Chip Capability) 195 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 100 A C110 C G G I T = 25C, 1ms 460 A C CM C Tab E I T = 25C 50 A A C E T = 25C 1.2 J AS C G = Gate E = Emitter SSOA V = 15V, T = 150C, R = 1 I = 200 A C = Collector Tab = Collector GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 1150 W C C Features T -55 ... +175 C J T 175 C Optimized for Low Switching Losses JM T -55 ... +175 C Square RBSOA stg Positive Thermal Coefficient of T Maximum Lead Temperature for Soldering 300 C L Vce(sat) T 1.6 mm (0.062in.) from Case for 10s 260 C Avalanche Rated SOLD High Current Handling Capability M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d International Standard Packages F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g High Power Density Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1200 V CES C GE Applications V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE High Frequency Power Inverters I V = V , V = 0V 10 A CES CE CES GE UPS T = 150C 1.25 mA Motor Drives J SMPS I V = 0V, V = 20V 100 nA GES CE GE PFC Circuits V I = I , V = 15V, Note 1 2.96 3.50 V Battery Chargers CE(sat) C C110 GE T = 150C 3.78 V Welding Machines J Lamp Ballasts 2018 IXYS CORPORATION, All Rights Reserved DS100404B(4/18)IXYK100N120C3 IXYX100N120C3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4950 pF ies C V = 25V, V = 0V, f = 1MHz 356 pF oes CE GE C 120 pF res Q 260 nC g(on) Q I = I , V = 15V, V = 0.5 V 47 nC ge C C110 GE CE CES Q 102 nC gc t 27 ns d(on) t 110 ns Inductive load, T = 25C ri J E 12.00 mJ I = I , V = 15V on C C110 GE t 120 ns V = 0.5 V , R = 1 d(off) CE CES G t 110 ns fi Note 2 E 4.90 mJ off t 27 ns d(on) Inductive load, T = 125C t 116 ns J ri I = I , V = 15V E 15.00 mJ C C110 GE on t V = 0.5 V , R = 1 146 ns CE CES G d(off) t 125 ns Note 2 fi E 6.15 mJ off R 0.13 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537