TM 1200V XPT IGBT V = 1200V IXYX110N120A4 CES TM GenX4 I = 110A C110 V 1.80V CE(sat) t = 300ns fi(typ) Ultra Low-Vsat PT IGBT for up to 5kHz Switching PLUS247 (IXYX) Symbol Test Conditions Maximum Ratings G G C V T = 25C to 175C 1200 V E CES J C (Tab) V T = 25C to 175C, R = 1M 1200 V CGR J GE G = Gate C = Collector V Continuous 20 V GES E = Emitter Tab = Collector V Transient 30 V GEM I T = 25C (Chip Capability) 375 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 110 A C110 C I T = 25C, 1ms 900 A CM C SSOA V = 15V, T = 125C, R = 2 I = 220 A GE VJ G CM Features (RBSOA) Clamped Inductive Load 0.8 V V CES P T = 25C 1360 W Optimized for Low Conduction Losses C C Positive Thermal Coefficient of T -55 ... +175 C J Vce(sat) T 175 C JM International Standard Package T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L 1.6 mm (0.062 in.) from Case for 10s Advantages M Mounting Torque 1.13/10 Nm/lb.in d High Power Density Weight 10 g Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Power Inverters J UPS BV I = 250 A, V = 0V 1200 V CES C GE Motor Drives SMPS V I = 3mA, V = V 4.5 6.5 V GE(th) C CE GE PFC Circuits I V = V , V = 0V 25 A CES CE CES GE Battery Chargers T = 125 C 500 A Welding Machines J Lamp Ballasts I V = 0V, V = 20V 200 nA GES CE GE Inrush Current Protection Circuits V I = I , V = 15V, Note 1 1.45 1.80 V CE(sat) C C110 GE T = 150 C 1.60 V J 2020 Littelfuse, Inc. DS101021A(8/20)IXYX110N120A4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 48 80 S fs C CE C 6030 pF ies C V = 25V, V = 0V, f = 1MHz 340 pF oes CE GE C 225 pF res Q 305 nC g(on) Q I = I , V = 15V, V = 0.5 V 58 nC ge C C110 GE CE CES Q 148 nC gc t 42 ns d(on) t 36 ns Inductive load, T = 25C ri J E I = 50A, V = 15V 2.5 mJ on C GE t 550 ns V = 0.5 V , R = 1.5 d(off) CE CES G t 300 ns fi Note 2 E 8.4 mJ off t 35 ns d(on) Inductive load, T = 150C t 33 ns J ri I = 50A, V = 15V E 4.4 mJ C GE on V = 0.5 V , R = 1.5 t 700 ns CE CES G d(off) t Note 2 590 ns fi E 14.0 mJ off R 0.11 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537