TM 1200V XPT Gen 4 V = 1200V IXYX110N120B4 CES IGBT I = 110A C110 V 2.10V CE(sat) t = 130ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching PLUS247 (IXYX) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V G CGR J GE G C C (Tab) V Continuous 20 V E GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Chip Capability) 340 A C25 C E = Emitter Tab = Collector I Terminal Current Limit 160 A LRMS I T = 110C 110 A C110 C I T = 25C, 1ms 800 A CM C SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V V CES Features P T = 25C 1360 W C C Optimized for 5-30kHZ Switching T -55 ... +175 C J Positive Thermal Coefficient of T 175 C JM Vce(sat) T -55 ... +175 C International Standard Package stg T Maximum Lead Temperature for Soldering 300 C L 1.6 mm (0.062 in.) from Case for 10s Advantages M Mounting Force 20..120 / 4.5..27 Nm/lb.in d High Power Density Weight 6 g Low Gate Drive Requirement Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 1200 V PFC Circuits CES C GE Battery Chargers V I = 3mA, V = V 4.5 6.5 V GE(th) C CE GE Welding Machines I V = V , V = 0V 25 A Lamp Ballasts CES CE CES GE T = 150 C 1.5 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = I , V = 15V, Note 1 1.66 2.10 V CE(sat) C C110 GE T = 150 C 1.95 V J 2021 Littelfuse, Inc. DS101053B(10/21)IXYX110N120B4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 55A, V = 10V, Note 1 40 68 S fs C CE C 5460 pF ies C V = 25V, V = 0V, f = 1MHz 340 pF oes CE GE C 220 pF res Q 340 nC g(on) Q I = I , V = 15V, V = 0.5 V 52 nC ge C C110 GE CE CES Q 144 nC gc t 45 ns d(on) t 50 ns Inductive load, T = 25C ri J E I = 50A, V = 15V 3.60 mJ on C GE t 390 ns V = 0.5 V , R = 2 d(off) CE CES G t 130 ns fi Note 2 E 3.85 mJ off t 34 ns d(on) Inductive load, T = 150C t 38 ns J ri I = 50A, V = 15V E 4.96 mJ C GE on V = 0.5 V , R = 2 t 440 ns CE CES G d(off) t Note 2 210 ns fi E 6.45 mJ off R 0.11 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537