TM 1200V XPT IGBTs V = 1200V IXYK120N120C3 CES TM GenX3 I = 120A IXYX120N120C3 C110 V 3.20V CE(sat) t = 96ns fi(typ) High-Speed IGBTs for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C V T = 25C to 175C 1200 V E CES J Tab V T = 25C to 175C, R = 1M 1200 V CGR J GE V Continuous 20 V PLUS247 (IXYX) GES V Transient 30 V GEM I T = 25C (Chip Capability) 240 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 120 A C110 C G G I T = 25C, 1ms 700 A C CM C Tab E I T = 25C 60 A A C E T = 25C 2 J AS C G = Gate E = Emitter SSOA V = 15V, T = 150C, R = 1 I = 240 A C = Collector Tab = Collector GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 1500 W C C Features T -55 ... +175 C J T 175 C Optimized for Low Switching Losses JM T -55 ... +175 C Square RBSOA stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Positive Thermal Coefficient of T 1.6 mm (0.062in.) from Case for 10s 260 C Vce(sat) SOLD Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d High Current Handling Capability F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Weight TO-264 10 g Advantages PLUS247 6 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV I = 250 A, V = 0V 1200 V Applications CES C GE V I = 500 A, V = V 3.0 5.0 V GE(th) C CE GE High Frequency Power Inverters I V = V , V = 0V 25 A UPS CES CE CES GE Motor Drives T = 150C 1.5 mA J SMPS I V = 0V, V = 20V 100 nA GES CE GE PFC Circuits Battery Chargers V I = I , V = 15V, Note 1 2.55 3.20 V CE(sat) C C110 GE Welding Machines T = 150C 3.40 V J Lamp Ballasts 2013 IXYS CORPORATION, All Rights Reserved DS100451B(9/13)IXYK120N120C3 IXYX120N120C3 Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 68 S fs C CE C 9850 pF ies C V = 25V, V = 0V, f = 1MHz 580 pF oes CE GE C 218 pF res Q 412 nC g(on) Q I = I , V = 15V, V = 0.5 V 73 nC ge C C110 GE CE CES Q 180 nC gc t 35 ns d(on) t 77 ns Inductive load, T = 25C ri J E I = 100A, V = 15V 6.75 mJ on C GE Terminals: 1 = Gate t 176 ns V = 0.5 V , R = 1 2,4 = Collector d(off) CE CES G 3 = Emitter t 96 ns fi Note 2 E 5.10 mJ off t 33 ns d(on) Inductive load, T = 150C t 72 ns J ri I = 100A, V = 15V E 10.30 mJ C GE on V = 0.5 V , R = 1 t 226 ns CE CES G d(off) t Note 2 120 ns fi E 7.20 mJ off R 0.10 C/W thJC R 0.15 C/W thCS TM PLUS247 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Terminals: 1 - Gate 2 - Collector 3 - Emitter Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537