TM 1200V XPT IGBT V = 1200V IXYX140N120A4 CES TM GenX4 I = 140A C110 V 1.70V CE(sat) t = 320ns fi(typ) Ultra Low-Vsat IGBT for up to 5kHz Switching PLUS247 (IXYX) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J G G C V T = 25C to 175C, R = 1M 1200 V CGR J GE E C (Tab) V Continuous 20 V GES G = Gate C = Collector V Transient 30 V GEM E = Emitter Tab = Collector I T = 25C (Chip Capability) 480 A C25 C I Terminal Current Limit 160 A LRMS I T = 110C 140 A C110 C I T = 25C, 1ms 1200 A CM C SSOA V = 15V, T = 125C, R = 2 I = 280 A GE VJ G CM Features (RBSOA) Clamped Inductive Load 0.8 V V CES P T = 25C 1500 W Optimized for Low Conduction Losses C C Positive Thermal Coefficient of T -55 ... +175 C J Vce(sat) T 175 C JM International Standard Package T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L Advantages 1.6 mm (0.062 in.) from Case for 10s F Mounting Force 20..120 /4.5..27 N/lb High Power Density C Low Gate Drive Requirement Weight 6 g Applications Power Inverters UPS Motor Drives Symbol Test Conditions Characteristic Values SMPS (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J PFC Circuits BV I = 250 A, V = 0V 1200 V Battery Chargers CES C GE Welding Machines V I = 4mA, V = V 4.5 6.5 V GE(th) C CE GE Lamp Ballasts Inrush Current Protection Circuits I V = V , V = 0V 25 A CES CE CES GE T = 125 C 5 mA J I V = 0V, V = 20V 200 nA GES CE GE V I = I , V = 15V, Note 1 1.34 1.70 V CE(sat) C C110 GE T = 150 C 1.50 V J 2020 Littelfuse, Inc. DS101009A(6/20)IXYX140N120A4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 60 100 S fs C CE C 8300 pF ies C V = 25V, V = 0V, f = 1MHz 470 pF oes CE GE C 300 pF res Q 420 nC g(on) Q I = I , V = 15V, V = 0.5 V 68 nC ge C C110 GE CE CES Q 210 nC gc t 52 ns d(on) t 47 ns Inductive load, T = 25C ri J E I = 70A, V = 15V 4.9 mJ on C GE t 590 ns V = 0.5 V , R = 1.5 d(off) CE CES G t 320 ns fi Note 2 E 12.0 mJ off t 44 ns d(on) Inductive load, T = 150C t 42 ns J ri I = 70A, V = 15V E 7.4 mJ C GE on V = 0.5 V , R = 1.5 t 710 ns CE CES G d(off) t Note 2 530 ns fi E 20.0 mJ off R 0.10 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537