Advance Technical Information V = 2500V High Voltage IXYX40N250CHV CES TM I = 40A XPT IGBT C110 V 4.0V CE(sat) t = 134ns fi(typ) Symbol Test Conditions Maximum Ratings TO-247PLUS-HV V T = 25C to 175C 2500 V CES J V T = 25C to 175C, R = 1M 2500 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM G E I T = 25C 154 A C25 C Tab C I T = 110C 40 A C110 C I T = 25C, 1ms 370 A CM C SSOA V = 15V, T = 150C, R = 1 I = 80 A G = Gate E = Emitter GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V C = Collector Tab = Collector P T = 25C 1500 W C C T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L High Voltage Package T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD High Blocking Voltage F Mounting Force 20..120/4.5..27 N/lb C High Peak Current Capability Weight 6 g Low Saturation Voltage Advantages Low Gate Drive Requirement High Power Density Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 2500 V CES C GE V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE UPS I V = V , V = 0V 15 A Motor Drives CES CE CES GE SMPS T = 150C 4 mA J PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE High Frequency Power Inverters V I = 40A, V = 15V, Note 1 3.2 4.0 V CE(sat) C GE T = 150C 4.4 V J 2017 IXYS CORPORATION, All Rights Reserved DS100814B(5/17)IXYX40N250CHV Symbol Test Conditions Characteristic Values TO-247PLUS-HV Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 40A, V = 10V, Note 1 24 42 S fs C CE R Gate Input Resistance 2.0 Gi C 5470 pF ies C V = 25V, V = 0V, f = 1MHz 204 pF oes CE GE C 74 pF res Q 270 nC g(on) Q I = 40A, V = 15V, V = 0.5 V 28 nC ge C GE CE CES Q 110 nC gc 1 - Gate t 21 ns d(on) 2 - Emitter t Inductive load, T = 25C 22 ns 3,4 - Collector ri J E I = 40A, V = 15V 11.7 mJ on C GE t V = 0.5 V , R = 1 200 ns d(off) CE CES G t 134 ns fi Note 2 E 6.9 mJ off t 21 ns d(on) Inductive load, T = 150C t 22 ns J ri I = 40A, V = 15V E 14.7 mJ C GE on t V = 0.5 V , R = 1 255 ns d(off) CE CES G t 250 ns fi Note 2 E 11.5 mJ off R 0.10 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (Clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537