TM 900V XPT IGBT V = 900V IXYY8N90C3 CES TM GenX3 I = 8A IXYP8N90C3 C110 V 3.0V CE(sat) t = 130ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings E V T = 25C to 175C 900 V CES J C (Tab) V T = 25C to 175C, R = 1M 900 V CGR J GE V Continuous 20 V GES TO-220 (IXYP) V Transient 30 V GEM I T = 25C 20 A C25 C I T = 110C 8 A C110 C I T = 25C, 1ms 48 A CM C G C C (Tab) I T = 25C 4 A E A C E T = 25C 15 mJ AS C SSOA V = 15V, T = 150C, R = 30 I = 16 A G = Gate C = Collector GE VJ G CM E = Emitter Tab = Collector (RBSOA) Clamped Inductive Load V V CE CES P T = 25C 125 W C C T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C Optimized for Low Switching Losses stg Square RBSOA T Maximum Lead Temperature for Soldering 300 C L Positive Thermal Coefficient of T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Vce(sat) Avalanche Rated M Mounting Torque (TO-220) 1.13/10 Nm/lb.in. d International Standard Packages Weight TO-252 0.35 g TO-220 3.00 g Advantages High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250 A, V = 0V 950 V CES C GE High Frequency Power Inverters V I = 250 A, V = V 3.5 6.0 V GE(th) C CE GE UPS I V = V , V = 0V 10 A CES CE CES GE Motor Drives T = 150C 150 A SMPS J PFC Circuits I V = 0V, V = 20V 100 nA GES CE GE Battery Chargers V I = 8A, V = 15V, Note 1 2.15 3.00 V Welding Machines CE(sat) C GE T = 150C 2.75 V Lamp Ballasts J 2014 IXYS CORPORATION, All Rights Reserved DS100399B(12/14)IXYY8N90C3 IXYP8N90C3 Symbol Test Conditions Characteristic Values TO-252 AA Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 8A, V = 10V, Note 1 2.9 4.8 S fs C CE C 400 pF ies C V = 25V, V = 0V, f = 1MHz 24 pF oes CE GE C 7.8 pF res Q 13.3 nC g(on) Q I = 8A, V = 15V, V = 0.5 V 3.4 nC ge C GE CE CES 1. Gate 2. Collector Q 5.8 nC gc 3. Emitter 4. Collector t 16 ns Bottom Side d(on) t 20 ns Inductive load, T = 25C ri J E 0.46 mJ I = 8A, V = 15V on Dim. Millimeter Inches C GE Min. Max. Min. Max. t 40 ns V = 0.5 V , R = 30 d(off) CE CES G A 2.19 2.38 0.086 0.094 t 130 ns fi Note 2 A1 0.89 1.14 0.035 0.045 E 0.18 0.50 mJ A2 0 0.13 0 0.005 f of b 0.64 0.89 0.025 0.035 t 17 ns b1 0.76 1.14 0.030 0.045 d(on) b2 5.21 5.46 0.205 0.215 Inductive load, T = 125C t 22 ns J ri c 0.46 0.58 0.018 0.023 I = 8A, V = 15V E 1.00 mJ c1 0.46 0.58 0.018 0.023 C GE on D 5.97 6.22 0.235 0.245 V = 0.5 V , R = 30 t 75 ns CE CES G d(off) D1 4.32 5.21 0.170 0.205 t 163 ns Note 2 E 6.35 6.73 0.250 0.265 fi E1 4.32 5.21 0.170 0.205 E 0.22 mJ off e 2.28 BSC 0.090 BSC e1 4.57 BSC 0.180 BSC R 1.20 C/W thJC H 9.40 10.42 0.370 0.410 R TO-252 0.35 C/W L 0.51 1.02 0.020 0.040 thCS TO-220 0.50 C/W L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 2.54 2.92 0.100 0.115 TO-220 Outline Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Pins: 1 - Gate 2 - Collector 3 - Emitter IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537